F59L8G81KSA-25TG2R

The F59L8G81KSA-25TG2R is an 8 Gbit SLC NAND flash memory organized as 512M × 8 × 2 die and designed for high-reliability non-volatile storage. The device is supplied at 3.3V (operating range 2.7V–3.6V) and is offered in a 48-pin TSOPI surface-mount package.

Built for embedded storage applications, this SLC NAND supports large page sizes and block erase granularity, hardware data protection and features such as cache program/read and copy-back operations for efficient data handling in solid-state file storage, voice recording and image capture systems.

Key Features

• Memory Architecture — 8.59 Gbit total capacity implemented as two stacked 4 Gbit dies (512M × 8 × 2), providing a large linear address space for high-density storage.
• Page and Block Organization — Large page format with 4K + 256 byte pages and a 4352-byte data register; block erase unit of 64 pages = (256K + 16K) bytes simplifies bulk operations.
• Performance — Read cycle timing of 25 ns and random read latency up to 25 µs (max). Page program typical time 400 µs (max 700 µs); block erase typical 3.5 ms (max 10 ms). An access time of 20 ns is provided in the device specification.
• Endurance & Retention — SLC (1 bit/cell) technology with endurance rated to 60K program/erase cycles and uncycled data retention of 10 years at 55°C for reliable long-term storage.
• Interface & Command Set — Parallel NAND interface with command/address/data multiplexed on DQ port. Supports cache program/read, copy-back, automatic program/erase and boot-from-NAND operations.
• Reliability & Protection — Hardware data protection with program/erase lockout during power transitions and ECC requirement of 8 bits per 512 bytes to support data integrity.
• Power & Packaging — 3.3V nominal supply (2.7V–3.6V range); surface-mount TSOPI-48 package (12 mm × 20 mm body, 0.5 mm pin pitch) for compact board-level integration.
• Operating Grade — Commercial grade device with specified operating temperature range of 0°C to 70°C.

Typical Applications

• Solid-State File Storage — High-density non-volatile storage for embedded file systems and removable media where SLC endurance and retention are required.
• Image Capture & Still Cameras — Large page sizes and block erase granularity accommodate image file storage and high-throughput writes for camera systems.
• Voice Recording Devices — Reliable program/erase cycles and long retention support voice data logging and playback applications.
• Embedded Boot & Firmware Storage — Boot-from-NAND support and automatic memory download features make it suitable for storing bootloaders and firmware images.

Unique Advantages

• SLC Reliability: 1 bit/cell SLC architecture combined with 60K P/E cycles provides robust endurance and predictable retention for long-life applications.
• Large Page & Block Architecture: 4K+256 byte pages and 64-page blocks simplify bulk data management and improve program/erase efficiency.
• Stacked-DIE Implementation: Two 4 Gbit dies stacked together allow special operations and dense storage without increasing board area.
• Comprehensive Command Support: Cache program/read, copy-back and automatic program/erase reduce host overhead and improve throughput for application-level transfers.
• Hardware Data Protection: Program/erase lockout during power transitions and ECC guidance (8 bits/512 bytes) enhance data integrity in the field.
• Compact TSOPI Packaging: TSOPI-48 surface-mount package (12 mm × 20 mm) supports compact PCB designs while providing a standard parallel NAND footprint.

Why Choose F59L8G81KSA-25TG2R?

The F59L8G81KSA-25TG2R pairs SLC flash reliability with large-page architecture and a parallel NAND interface to deliver a robust storage solution for embedded systems requiring long-term data retention and high program/erase endurance. Its stacked-die organization and on-chip features—such as cache operations, copy-back and boot-from-NAND—help reduce host complexity while enabling efficient data transfer flows.

This part is well suited to designers and procurement teams targeting commercial-grade consumer, industrial and imaging applications that need dependable non-volatile storage in a compact TSOPI package with clearly specified voltage, timing and endurance characteristics.

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