F59L8G81XA-25BG2Y

8Gb NAND Flash
Part Description

SLC NAND Flash, 8Gbit (1Gx8), 3.3V, 63-ball BGA, 25 ns

Quantity 981 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerESMT
Manufacturing StatusMP
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device PackageBGA-63Memory FormatFLASHTechnologyNAND Flash - SLC
Memory Size8 GbitAccess Time20 nsGradeCommercial
Clock FrequencyN/AVoltage2.7V ~ 3.6VMemory TypeNon-Volatile
Operating Temperature0°C – 70°CWrite Cycle Time Word Page200 µsPackaging63-BGA
Mounting MethodSurface MountMemory InterfaceParallelMemory Organization1G x 8
Moisture Sensitivity Level3RoHS ComplianceCompliantREACH ComplianceREACH Unknown
QualificationN/AECCNEAR99HTS Code8542.32.00.71

Overview of F59L8G81XA-25BG2Y – SLC NAND Flash, 8Gbit (1Gx8), 3.3V, 63-ball BGA, 25 ns

The F59L8G81XA-25BG2Y is an 8 Gbit Single-Level Cell (SLC) NAND Flash memory organized as 1G × 8. Designed for parallel asynchronous operation, the device implements an 8-bit multiplexed data bus and standard control signals for command, address and data transfer.

This commercial-grade, non-volatile Flash memory operates from 2.7 V to 3.6 V and is offered in a 63-ball BGA surface-mount package. It targets designs requiring reliable SLC NAND storage with ONFI 1.0 protocol compatibility and industry-standard pinout behavior for density scaling.

Key Features

  • Memory Architecture  8.59 Gbit SLC NAND organized as 1G × 8 with device size of 4096 blocks and two planes of 2048 blocks per plane.
  • Page and Block Organization  Page size is 4,320 bytes (4,096 + 224 spare); block size is 64 pages (256K + 14K bytes).
  • Performance  Asynchronous I/O with RC/ WC speed grade 25 ns; typical array timings include read page 25 µs, program page 200 µs (typical) and erase block 3 ms (typical).
  • Interface and Protocol  Parallel 8-bit multiplexed I/O with standard control signals (CE#, CLE, ALE, WE#, RE#) and ONFI 1.0-compliant command set.
  • Advanced Command and Data Modes  Supports program page cache mode, read page cache mode, one-time programmable (OTP) mode, two-plane commands and multi-die (LUN) operations.
  • Device Management and Signals  Includes R/B# ready/busy status, WP# hardware write-protect for entire device, RESET (FFh) required as first command after power-on, and internal operation status byte for software detection.
  • Reliability  Endurance rated to 60,000 program/erase cycles with data retention compliant to JESD47G qualification guidance (see qualification report).
  • Power  Operating VCC range 2.7 V to 3.6 V for 3.3 V system compatibility.
  • Package and Mounting  Surface-mount 63-ball BGA (BGA-63) package, commercial operating temperature 0°C to +70°C, RoHS compliant.

Typical Applications

  • Commercial embedded storage  Non-volatile data and file storage in systems operating within the commercial temperature range (0°C to +70°C).
  • Firmware and code storage  Storage of firmware, boot code and system images using SLC NAND for endurance and reliable program/erase cycles.
  • Scalable density designs  Systems that may be upgraded to higher density parts later benefit from the standard pinout, which enables migration without board redesign.

Unique Advantages

  • Single-Level Cell reliability: SLC technology and a 60,000 program/erase cycle endurance provide robust write/erase longevity for critical data storage.
  • ONFI 1.0 compatibility: Standard ONFI protocol support and a standard pinout simplify integration and support interoperability with ONFI-aware controllers.
  • Performance-balanced array timings: Typical read, program and erase times (25 µs read page, 200 µs program page, 3 ms erase block) give predictable latency for embedded storage operations.
  • Flexible command set: Cache program/read modes, OTP, two-plane and multi-die operations offer options to optimize throughput and storage management.
  • Hardware status and protection signals: R/B# and WP# provide hardware-level operation monitoring and write protection; the operation status byte supports software-level completion and pass/fail checks.
  • Commercial temperature and RoHS compliance: 0°C to +70°C operating range and RoHS-compliant manufacturing meet common commercial deployment and regulatory requirements.

Why Choose F59L8G81XA-25BG2Y?

The F59L8G81XA-25BG2Y delivers SLC NAND non-volatile storage with a well-documented organization and predictable array performance. Its ONFI 1.0 compatibility, standard multiplexed 8-bit interface and defined control signals make it straightforward to integrate into existing parallel NAND designs and to scale densities without a board redesign.

With a 2.7 V–3.6 V operating range, commercial temperature rating, and a compact 63-ball BGA package, this device is suited to commercial embedded applications that demand reliable program/erase endurance, data retention per JESD47G guidance, and standard NAND Flash feature set including cache modes, OTP and multi-plane operations.

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