F59L8G81XA-25BIG2Y
| Part Description |
SLC NAND Flash, 8.59 Gbit, 1G×8, Industrial BGA |
|---|---|
| Quantity | 634 Available (as of May 5, 2026) |
Specifications & Environmental
| Device Package | BGA-63 | Memory Format | FLASH | Technology | NAND Flash - SLC | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 8 Gbit | Access Time | 20 ns | Grade | Industrial | ||
| Clock Frequency | N/A | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | -40°C – 85°C | Write Cycle Time Word Page | 200 µs | Packaging | 63-BGA | ||
| Mounting Method | Surface Mount | Memory Interface | Parallel | Memory Organization | 1G x 8 | ||
| Moisture Sensitivity Level | 3 | RoHS Compliance | Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | JEDEC | ECCN | EAR99 | HTS Code | 8542.32.00.71 |
Overview of F59L8G81XA-25BIG2Y – SLC NAND Flash, 8.59 Gbit, 1G×8, Industrial BGA
The F59L8G81XA-25BIG2Y is an industrial-grade SLC NAND Flash memory device offering 8.59 Gbit organized as 1G × 8. Designed for embedded and industrial storage applications, it combines single-level cell (SLC) reliability with an ONFI 1.0–compliant parallel NAND interface for straightforward integration into existing designs.
With a broad operating voltage range and industrial temperature support, this device targets applications that require robust non-volatile storage, predictable program/erase endurance, and standard low-pin-count NAND connectivity in a compact BGA package.
Key Features
- Memory Organization — 8.59 Gbit capacity organized as 1G × 8 with device structure of 4096 blocks, enabling large non-volatile storage in a single chip.
- Page & Block Geometry — Page size 4,320 bytes (4,096 + 224 bytes) and block size of 64 pages (256K + 14K bytes) for predictable erase/program granularity.
- Array & Plane Structure — Two planes with 2,048 blocks per plane and support for two-plane commands and multi-die (LUN) operations to facilitate parallelism and internal data movement.
- Performance — Asynchronous I/O timing (RC/1WC) at 25 ns and typical array timings: read page 25 µs, program page 200 µs (typical), erase block 3 ms (typical).
- Interface Compatibility — Parallel NAND interface, ONFI 1.0–compliant command set with advanced features including program/read cache modes and OTP mode.
- Power — Operating voltage range VCC: 2.7 V to 3.6 V for common 3.3 V systems.
- Package & Mounting — Surface-mount 63-ball BGA (BGA-63) package for compact board-level integration.
- Industrial Temperature & Qualification — Grade: Industrial with operating temperature range −40 °C to +85 °C and JEDEC qualification.
- Reliability & Endurance — SLC technology with endurance rated at 60,000 program/erase cycles and data retention compliant with JESD47G.
- Hardware Signals & Control — Ready/Busy# (R/B#) and WP# signals for operation monitoring and hardware write protection; RESET required as first command after power-on.
Typical Applications
- Industrial Embedded Storage — Non-volatile program and data storage in industrial controllers and industrial IoT devices where extended temperature range and endurance are required.
- Firmware & Boot Code Storage — Reliable storage for firmware images and bootloaders benefiting from SLC endurance and predictable program/erase timing.
- Data Logging & Configuration Memory — Retention-compliant non-volatile storage for periodic data logging and device configuration in industrial environments.
Unique Advantages
- SLC Endurance — 60,000 program/erase cycles provide longevity for write-intensive embedded applications.
- ONFI 1.0 Compatibility — Standardized parallel NAND command set simplifies integration and future upgrades without major board redesign.
- Industrial Temperature Range — −40 °C to +85 °C operation supports deployment across a wide range of industrial environments.
- Robust Array Features — Two-plane operations, internal data move, and multi-die support enable efficient internal management and improved throughput for multi-threaded operations.
- Compact BGA Packaging — 63-ball BGA reduces board footprint while delivering full NAND functionality for space-constrained designs.
Why Choose F59L8G81XA-25BIG2Y?
The F59L8G81XA-25BIG2Y positions itself as a reliable, industrial-grade SLC NAND Flash option for designers needing predictable endurance, JEDEC qualification, and standardized ONFI parallel interface compatibility. Its combination of SLC endurance, detailed array geometry, and advanced command features provides a controllable platform for firmware storage, data logging, and embedded system memory.
This device is well suited to engineers and procurement teams building industrial embedded products that demand robust non-volatile memory with compact BGA packaging, broad operating voltage support (2.7–3.6 V), and readiness for harsh temperature environments.
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Date Founded: 1998
Headquarters: Hsinchu Science Park, Hsinchu, Taiwan
Employees: 400+
Revenue: $377.8 Million
Certifications and Memberships: N/A