F59L8G81XA-25TIG2Y

The F59L8G81XA-25TIG2Y is an 8 Gbit single-level cell (SLC) NAND Flash memory device in a 1G × 8 organization designed for industrial applications. Built on a parallel asynchronous NAND architecture with ONFI 1.0 compliance, it delivers durable non-volatile storage for embedded systems requiring robust program/erase endurance and predictable performance.

With an operating voltage range of 2.7 V to 3.6 V, JEDEC qualification, and an industrial temperature rating of −40 °C to +85 °C, this TSOPI-packaged device is suited for deployment in harsh environments where long-term data retention and high P/E cycle endurance are required.

Key Features

• Memory Architecture — Single-level cell (SLC) NAND organized as 1G × 8 for 8 Gbit total capacity; device includes two planes and 4,096 blocks for large, addressable storage.
• Page & Block Organization — Page size 4,320 bytes (4,096 + 224 bytes) and block size of 64 pages (256 KB + 14 KB), enabling standard NAND block and page operations.
• Performance — Asynchronous I/O with RC/WC timing specified at 25 ns and typical page operations including read page ~25 µs and program page ~200 µs for predictable transfer behavior.
• Endurance & Retention — Rated for 60,000 program/erase cycles with data retention compliant to JESD47G-level qualification reporting.
• Command & Cache Support — ONFI NAND Flash protocol with advanced command set including program page cache, read page cache, OTP mode, two-plane commands, and multi-die (LUN) operations.
• Hardware Signals & Protection — Standard NAND control signals (CE#, CLE, ALE, WE#, RE#), ready/busy (R/B#), and WP# for device-wide write protection; operation status byte available for software status checks.
• Power & Package — 3.3 V nominal operation (VCC 2.7–3.6 V) in a surface-mount 48-pin TSOPI package (12 mm × 20 mm, 0.5 mm pitch) for board-level integration.
• Industrial Temperature Range — Rated for −40 °C to +85 °C suitable for industrial deployment scenarios.

Typical Applications

• Industrial Embedded Systems — Non-volatile storage for control firmware and configuration data in industrial controllers and instrumentation.
• Firmware and Boot Storage — Reliable storage of boot code and update images where endurance and data retention are important.
• Data Logging and Edge Storage — Local storage for telemetry, event logging, and sensor data capture in edge devices operating across wide temperature ranges.
• Networking and Communications Equipment — Code and parameter storage for network appliances and communication modules that require robust NAND functionality.

Unique Advantages

• SLC Endurance — 60,000 program/erase cycles provide extended lifecycle for write-intensive industrial applications.
• ONFI 1.0 Compatibility — Standardized command and interface behavior facilitates integration with existing NAND controller designs.
• Advanced Command Set — Cache modes, two-plane and multi-die operations improve throughput and flexibility for complex memory workflows.
• Hardware and Software Status Options — Ready/Busy# hardware signal plus operation status byte give both hardware- and software-based methods for detecting operation completion and pass/fail conditions.
• Wide Operating Voltage — 2.7 V–3.6 V tolerance supports typical 3.3 V systems and helps accommodate supply variation in industrial environments.
• JEDEC Qualification — Qualification and data retention aligned with JESD47G provide traceable quality metrics for system design and validation.

Why Choose F59L8G81XA-25TIG2Y?

The F59L8G81XA-25TIG2Y combines single-level cell NAND reliability with industry-standard ONFI protocol and a TSOPI surface-mount package to deliver a practical, high-endurance non-volatile memory option for industrial embedded designs. Its combination of robust endurance, predictable page/block performance, and comprehensive command support makes it suitable for firmware storage, data logging, and other embedded storage roles where longevity and thermal resilience matter.

Engineers specifying the F59L8G81XA-25TIG2Y gain a JEDEC-qualified, industrial-temperature-rated memory device that integrates into existing parallel NAND ecosystems while offering features for optimized performance and system-level error management.

Request a quote or submit an inquiry to our sales team to discuss pricing, lead times, and availability for the F59L8G81XA-25TIG2Y.