F59L8G81KSA-25TIG2R

The F59L8G81KSA-25TIG2R is an 8 Gbit SLC NAND Flash memory implemented as two stacked 4 Gbit dies. It provides parallel x8 I/O and a 3.3 V supply range (2.7 V–3.6 V) in a 48-pin TSOPI surface-mount package, targeting industrial-temperature embedded storage applications.

Designed for high-density non-volatile storage, the device is suited to solid-state file storage, voice and image recording, and other systems that require reliable, long-term data retention and robust program/erase management.

Key Features

• Memory Architecture 8 Gbit total density implemented as two stacked 4 Gbit dies; organized as 512M × 8 × 2 die with 4352-byte data register increments, page size (4K + 256) bytes and block size 64 pages = (256K + 16K) bytes.
• Performance Read cycle 25 ns and documented access time 20 ns; Random Read up to 25 µs (max). Cache read and cache program operations supported for higher throughput.
• Program / Erase Characteristics Page program typical 400 µs (700 µs max); block erase typical 3.5 ms (10 ms max); page program time and automatic program/erase sequencing reduce host overhead. Word/page write-cycle timing documented (200 µs).
• Reliability & Endurance Single-level cell (1 bit/cell) SLC technology with endurance rated to 60K P/E cycles and uncycled data retention of 10 years at 55°C. ECC requirement: 8 bit per 512 Byte; hardware data protection and program/erase lockout during power transitions provided.
• Interface & Power Parallel command/address/data multiplexed DQ port with x8 I/O; standard control signals including CLE, ALE, WE#, CE#, R/B#; VCC 3.3 V operation with 2.7 V–3.6 V supply range.
• Package & Temperature Surface-mount 48-pin TSOPI (12 mm × 20 mm body, 0.5 mm pitch), JEDEC-qualified, RoHS-compliant and specified for industrial operation from −40°C to 85°C.
• System Features Supports boot-from-NAND and automatic page 0 read at power-up options, automatic memory download, copy-back operation and EDO mode for flexible system integration.

Typical Applications

• Embedded Industrial Storage — Industrial controllers and data loggers that require high-density non-volatile storage across −40°C to 85°C.
• Solid-State File Storage — Devices that need reliable block-based erase and program capability for persistent file storage.
• Voice Recording — Voice and audio recorders that benefit from SLC endurance and page-oriented programming.
• Image File Memory for Still Cameras — High-density frame storage with robust program/erase behavior and cache operations for managed data transfer.

Unique Advantages

• Industrial Temperature Range: Specified operation from −40°C to 85°C for deployment in harsh environments.
• SLC Endurance: 1 bit per cell SLC architecture with 60K P/E cycles and 10-year retention (uncycled, at 55°C) for long service life.
• Stacked Die Density: Two 4 Gbit dies deliver 8 Gbit capacity in a single TSOPI package for compact, high-capacity designs.
• Robust Data Integrity: ECC requirement of 8 bit/512 Byte plus hardware data protection and program/erase lockout during power transitions.
• Flexible Power & Interface: 3.3 V nominal operation with 2.7 V–3.6 V range and a parallel x8 DQ interface for compatibility with existing embedded platforms.
• Boot and Data Management Features: Built-in options such as automatic page 0 read at power-up, boot-from-NAND support, cache program/read and copy-back operations simplify system boot and data handling.

Why Choose F59L8G81KSA-25TIG2R?

The F59L8G81KSA-25TIG2R combines proven SLC NAND technology, a stacked die architecture and industrial-grade specification to deliver high-density, durable non-volatile storage for embedded systems. Its documented program/erase timings, ECC requirement and hardware protections help integrate reliable storage into designs that demand long-term retention and frequent write cycles.

This device is well suited to designers and procurement teams seeking a JEDEC-qualified, RoHS-compliant NAND Flash solution in a TSOPI package for industrial applications such as data logging, media storage and system boot memory. The combination of endurance, operating-temperature range and system-friendly features supports scalable, robust product deployments.

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