F59L8G81KSA-25TIAG2R
| Part Description |
SLC NAND Flash, 8.59 Gbit, x8, 3.3V, 25 ns, 48‑pin TSOPI, Automotive |
|---|---|
| Quantity | 1,718 Available (as of May 6, 2026) |
Specifications & Environmental
| Device Package | TSOPI-48 | Memory Format | FLASH | Technology | NAND Flash - SLC | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 8 Gbit | Access Time | 20 ns | Grade | Automotive | ||
| Clock Frequency | N/A | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | -40°C – 105°C | Write Cycle Time Word Page | 200 µs | Packaging | 48-TSOPI | ||
| Mounting Method | Surface Mount | Memory Interface | Parallel | Memory Organization | 512M x 8 x 2 die | ||
| Moisture Sensitivity Level | 3 | RoHS Compliance | Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | AEC-Q100 | ECCN | EAR99 | HTS Code | 8542.32.00.71 |
Overview of F59L8G81KSA-25TIAG2R – SLC NAND Flash, 8.59 Gbit, x8, 3.3V, 25 ns, 48‑pin TSOPI, Automotive
The F59L8G81KSA-25TIAG2R is an 8.59 Gbit SLC NAND Flash memory device organized as 512M × 8 × 2 die with a parallel x8 interface. Designed for high-reliability non-volatile storage, it supports 3.3 V operation (2.7 V to 3.6 V) and is supplied in a 48‑pin TSOPI surface-mount package.
This device targets embedded and automotive applications that require single-level-cell NAND storage with robust program/erase endurance, on-chip management features and automotive-grade qualification (AEC‑Q100).
Key Features
- Memory Type & Density SLC NAND Flash with 8.59 Gbit capacity organized as 512M × 8 × 2 die, providing deterministic single-bit-per-cell behavior.
- Interface & Timing Parallel x8 multiplexed command/address/data DQ port with access time specified at 20 ns and a catalog speed grade of 25 ns.
- Voltage & Package Wide supply range of 2.7 V to 3.6 V and available in a 48‑pin TSOPI surface-mount package (TSOPI‑48).
- Memory Organization & Operations Page size of (4K + 256) bytes, block size of (256K + 16K) bytes (64 pages per block), single plane, and 4352‑byte static registers for page transfers.
- Performance & Program/Erase Page program times noted (typical up to 400 µs, max 700 µs in datasheet) and block erase times (typical 3.5 ms, max 10 ms); random read typical 25 µs and read cycle 25 ns.
- Endurance & Data Retention Endurance rated at 60K program/erase cycles with uncycled data retention specified as 10 years at 55°C.
- Reliability & Safety Features Hardware data protection, program/erase lockout during power transitions, ECC requirement 8‑bit per 512‑byte, and compliance to JESD47K specifications.
- Automotive Qualification Grade: Automotive with AEC‑Q100 qualification, and an operating temperature range of −40°C to 105°C as listed in product specifications.
- Advanced Flash Features Support for cache program/read, copy‑back, automatic page 0 read at power‑up option, automatic memory download and boot from NAND capability.
Typical Applications
- Solid State File Storage High-density SLC storage for embedded file systems and industrial data logging where endurance and retention are required.
- Imaging and Multimedia Devices Image file memory for still cameras and voice recording applications that benefit from page‑based program and fast read operations.
- Automotive Embedded Systems Automotive‑grade non‑volatile storage for infotainment, telematics, and control systems leveraging AEC‑Q100 qualification and extended temperature range.
Unique Advantages
- AEC‑Q100 Automotive Qualification: Enables deployment in automotive environments with qualification explicitly listed in the product data.
- SLC Endurance and Retention: 60K P/E cycles and 10‑year uncycled data retention at 55°C provide long-term data integrity for mission‑critical storage.
- Large Page and Block Architecture: (4K + 256)‑byte pages and 64‑page blocks support efficient file transfers, block erase and program operations for high‑density storage.
- Built‑in Data Protection: Hardware protection, program/erase lockout during power transitions and ECC guidance (8‑bit/512‑byte) help maintain data reliability.
- Automated and Boot Capabilities: Features such as automatic page 0 read at power‑up, automatic memory download and boot from NAND simplify system boot and firmware management.
- Compact, Automotive‑Grade Packaging: TSOPI‑48 surface-mount package combines a small footprint with automotive temperature range support (−40°C to 105°C).
Why Choose F59L8G81KSA-25TIAG2R?
The F59L8G81KSA-25TIAG2R delivers automotive‑grade SLC NAND storage with explicit AEC‑Q100 qualification, robust endurance and retention metrics, and a compact TSOPI‑48 package suitable for space‑constrained embedded designs. Its page/block architecture, hardware protection features and on‑chip operational options (cache program/read, copy‑back, automatic power‑up behavior) make it well suited to systems that require reliable, long‑lived non‑volatile storage.
This device is appropriate for engineers designing automotive, industrial and consumer embedded systems who need deterministic SLC performance, broad supply voltage tolerance and integration features that simplify boot and firmware management.
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Date Founded: 1998
Headquarters: Hsinchu Science Park, Hsinchu, Taiwan
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Revenue: $377.8 Million
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