IS45S32200E-6BLA1-TR

The IS45S32200E-6BLA1-TR is a 64 Mbit synchronous DRAM organized as 2M × 32 with a quad-bank architecture and a fully synchronous interface. It is designed for 3.3 V memory systems and implements a pipelined architecture with internal bank management to improve throughput.

This device variant is specified for a 166 MHz clock (–6 speed grade) with a 5.5 ns access time (CAS latency = 3), making it suitable for designs that require parallel SDRAM with programmable burst and latency options.

Key Features

• Core & Architecture  Quad-bank synchronous DRAM with pipeline architecture; all signals referenced to the rising clock edge for predictable timing.
• Memory Organization  64 Mbit total capacity organized as 2M × 32 with 4 internal banks (524,288 words × 32-bit × 4 banks).
• Performance  –6 speed grade: 166 MHz clock frequency and 5.5 ns access time (CAS latency = 3); programmable CAS latency of 2 or 3 clocks.
• Burst & Sequence Control  Programmable burst lengths (1, 2, 4, 8, full page) and selectable burst sequence (sequential or interleaved); supports burst read/write and burst read/single write operations.
• Refresh & Self-Refresh  Supports AUTO REFRESH and self-refresh modes with specified refresh cycles (4096 refreshes over manufacturer-defined intervals depending on grade).
• Interface & Logic Levels  LVTTL-compatible interface with fully synchronous control referenced to clock input.
• Power  Single-supply operation at 3.3 V (specified voltage range 3.0 V to 3.6 V).
• Package  90-ball thin-film BGA (90-TFBGA, 8 × 13 mm body) for compact mounting.
• Operating Temperature  Specified ambient range −40 °C to +85 °C (TA) for the listed device variant.

Unique Advantages

• Flexible performance scaling: Programmable CAS latency (2 or 3) and multiple burst lengths allow designers to tune latency and throughput to system needs.
• Quad-bank architecture: Internal bank structure hides row access/precharge, improving effective data throughput in pipelined operations.
• Standard 3.3 V single supply: Operates across a 3.0 V–3.6 V range, matching common 3.3 V memory system rails.
• Compact BGA footprint: 90-TFBGA (8×13) package minimizes PCB area while supporting high-density mounting.
• Deterministic synchronous interface: All signals referenced to clock edge with LVTTL signaling for predictable integration in synchronous memory subsystems.

Why Choose IC DRAM 64MBIT PARALLEL 90TFBGA?

The IS45S32200E-6BLA1-TR provides a straightforward, synchronous 64 Mbit DRAM solution for designs requiring a parallel SDRAM interface, programmable burst behavior, and selectable CAS latency. Its 2M × 32 organization and quad-bank implementation support efficient, pipelined access patterns while the 3.3 V single-supply operation and compact 90-TFBGA package enable integration into space-constrained board designs.

This device is appropriate for systems that require a deterministic synchronous memory component with configurable timing and refresh modes, and for engineering teams seeking a spec-driven DRAM device with industrial temperature coverage to match their application requirements.

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