IS45S32200E-6TLA1-TR

The IS45S32200E-6TLA1-TR is a 64 Mbit synchronous DRAM organized as 2M × 32 with four internal banks. It is a pipeline, fully synchronous memory device designed for high-speed parallel data transfers in 3.3 V systems.

This SDRAM targets designs requiring programmable burst operation, selectable CAS latency, and standard LVTTL interfacing, delivering predictable timing and refresh behavior for system memory applications.

Key Features

• Core / Architecture  Quad-bank synchronous DRAM architecture with fully synchronous inputs and outputs referenced to the rising clock edge.
• Memory Organization  64 Mbit total capacity, internally configured as 2,048K × 32 bits (2M × 32) across four banks.
• Performance  Clock frequency rated at 166 MHz (product -6 speed grade) with access time from clock of 5.5 ns (CAS latency = 3, -6 grade).
• Burst and Latency Control  Programmable burst lengths (1, 2, 4, 8, full page) and programmable burst sequence (sequential/interleave); CAS latency selectable (2 or 3 clocks).
• Interface and Signaling  LVTTL compatible interface and parallel memory organization for synchronous, clocked read/write operations.
• Power and Refresh  Single 3.3 V supply (3.0 V – 3.6 V operating range) with self-refresh capability and standard auto-refresh support (multiple refresh cycle options noted in device documentation).
• Package and Temperature  Supplied in an 86-pin TSOP-II (86-TFSOP, 0.400" / 10.16 mm width) package and specified for an operating temperature range of -40°C to +85°C (TA).

Unique Advantages

• Deterministic synchronous timing: Programmable CAS latency and synchronous operation provide predictable access timing tied directly to the clock.
• Flexible burst operation: Multiple burst lengths and sequence modes simplify block transfers and can optimize bus utilization for burst read/write patterns.
• Standard 3.3 V support: Single 3.3 V power supply simplifies power rail design for systems using conventional SDRAM voltages.
• Compact TSOP-II package: 86-pin TSOP-II (10.16 mm width) offers a standard surface-mount footprint for dense board layouts.
• Industrial temperature rating: Specified operation from -40°C to +85°C supports deployment in a wide range of ambient conditions.

Why Choose IC DRAM 64MBIT PAR 86TSOP II?

The IS45S32200E-6TLA1-TR positions itself as a synchronous, parallel DRAM solution for designers needing a 64 Mbit memory with selectable latency and burst behavior. Its 2M × 32 organization, LVTTL interface, and 3.3 V supply make it suitable for systems that require predictable, clocked memory access and straightforward integration into parallel memory buses.

For designs demanding modular, industry-temperature rated SDRAM in an 86-pin TSOP-II package, this device delivers configurable timing, refresh capability, and standard interfacing to support robust system memory implementations.

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