IS45S32200E-7BLA2-TR

The IS45S32200E-7BLA2-TR is a 64Mbit synchronous DRAM device organized as 2M × 32 with four internal banks. It provides a parallel SDRAM interface operating from a 3.3V power supply and is optimized for synchronous, high-speed memory applications.

This device targets systems requiring pipelined, clock-referenced DRAM with programmable burst and latency options, and is available in a compact 90-TFBGA (8×13) package with an extended operating temperature range to support demanding environmental conditions.

Key Features

• Core & Architecture  Quad-bank synchronous DRAM organized as 524,288 × 32 × 4 (64 Mbit total) for improved throughput and internal bank management to hide row access/precharge delays.
• Memory Organization  2M × 32 configuration with 4 banks and 16,777,216 bits per bank (2,048 rows × 256 columns × 32 bits) to support burst and random column access every clock cycle.
• Performance & Timing  -7 timing grade supports a clock frequency of 143 MHz and an access time from clock of 5.5 ns (CAS latency = 3). Programmable CAS latency options of 2 or 3 clocks are supported.
• Burst Control & Sequencing  Programmable burst length (1, 2, 4, 8, full page) and selectable burst sequence (sequential or interleave) for flexible data-transfer patterns.
• Refresh & Power  Supports auto-refresh and self-refresh modes with specified refresh cycles in datasheet; single 3.3V power supply operation (rated 3.0 V to 3.6 V).
• Interface  Fully synchronous operation with all signals referenced to the rising clock edge and LVTTL-compatible interface signaling.
• Package & Temperature  Supplied in a 90-ball TF-BGA (90-TFBGA, 8×13) package and specified to operate from −40°C to +105°C (TA), enabling use in wide-temperature applications.

Typical Applications

• Embedded Systems  Use as system memory in embedded controllers and processors that require synchronous, burst-capable DRAM with a 3.3V supply.
• Networking & Communications  Buffering and packet memory in networking equipment where predictable, clocked data transfers and programmable burst behavior are required.
• Industrial Control  Memory for industrial controllers and instrumentation that need extended temperature operation and reliable synchronous DRAM behavior.
• Consumer Electronics  High-speed transient storage in consumer devices that accept a parallel SDRAM interface and 3.3V memory systems.

Unique Advantages

• Programmable Timing Flexibility: CAS latency selectable and multiple burst-length options allow designers to tune memory timing for specific throughput and latency needs.
• Internal Bank Architecture: Four internal banks reduce row-access overhead by hiding precharge and row activation, improving effective throughput for interleaved access patterns.
• Wide Voltage Range: Operates across a 3.0 V to 3.6 V supply window, providing tolerance for common 3.3V system rails.
• Extended Temperature Rating: Specified for −40°C to +105°C operation, enabling deployment in applications with wide ambient temperature requirements.
• Compact BGA Package: 90-TFBGA (8×13) package offers a space-efficient footprint for board designs that require surface-mount, high-density memory.
• Fully Synchronous LVTTL Interface: All signals referenced to the clock edge and LVTTL signaling simplify timing design in synchronous memory subsystems.

Why Choose IC DRAM 64MBIT PAR 90TFBGA?

The IS45S32200E-7BLA2-TR combines a 64Mbit synchronous DRAM architecture with programmable burst control, selectable CAS latency, and a quad-bank organization to deliver flexible, clocked memory performance for 3.3V systems. Its compact 90-TFBGA package and extended −40°C to +105°C operating range make it suitable for space-constrained and temperature-challenging designs.

This device is appropriate for engineers specifying synchronous, parallel DRAM in embedded, networking, industrial, or consumer applications that require deterministic, pipeline-based memory behavior and configurable data-transfer characteristics.

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