IS45S32200E-7TLA2-TR

The IS45S32200E-7TLA2-TR is a 64‑Mbit synchronous DRAM (SDRAM) device organized with quad-bank architecture for pipelined, high-speed data transfer. It implements a parallel, LVTTL-compatible interface and is designed for 3.3 V memory systems requiring a 32-bit data path.

This part provides programmable burst operation, selectable CAS latency, and self-refresh capabilities, plus an extended operating temperature option, making it suitable for systems that need deterministic synchronous memory behavior and configurable timing.

Key Features

• Core / Architecture 512K × 32 bits × 4 banks (64‑Mbit) synchronous DRAM with internal bank architecture to hide row access and precharge operations.
• Memory Organization Organized as quad-bank memory with a 32‑bit data width; supports burst read/write and burst read/single write operations.
• Timing & Performance Designed for clock frequencies including 200, 166, 143 and 133 MHz; this -7 variant is specified for 143 MHz with an access time from clock reported at 5.5 ns (CAS latency = 3).
• Programmable Burst & CAS Programmable burst lengths (1, 2, 4, 8, full page) and burst sequence (sequential/interleave); programmable CAS latency options of 2 or 3 clocks.
• Power Single 3.3 V supply operation with specified voltage supply range 3.0 V to 3.6 V.
• Refresh & Self‑Refresh Supports self‑refresh modes; refresh options include 4096 refresh cycles per 16 ms for A2 grade or 64 ms for commercial, industrial and A1 grade options as documented.
• Interface Parallel memory interface with LVTTL input/output signaling referenced to the positive clock edge for synchronous operation.
• Package & Temperature Range Available in 86‑pin TSOP‑II package (0.400", 10.16 mm width); operating temperature range listed as −40°C to +105°C (TA) for the specified grade.

Typical Applications

• 3.3 V memory systems Used as synchronous DRAM in systems that operate from a 3.3 V supply and require a parallel 32‑bit memory interface.
• High‑throughput buffering Suitable for designs needing pipelined, burstable memory transfers with programmable burst length and CAS timing.
• Thermally demanding environments Applicable where extended ambient temperature operation (−40°C to +105°C TA) is required for the memory component.
• Deterministic synchronous control Fits systems that depend on clock‑referenced signaling and predictable access timing (synchronous interface, fixed clock edge operation).

Unique Advantages

• Flexible timing configuration: Programmable CAS latency and burst lengths let designers tune latency and throughput to match system timing requirements.
• Quad‑bank architecture: Internal banking hides row access/precharge, improving effective throughput for interleaved access patterns.
• Broad frequency support: Documented operation at multiple clock rates (200 / 166 / 143 / 133 MHz) with the -7 option specified at 143 MHz, enabling selection of the appropriate speed grade.
• Self‑refresh capability: On‑chip self‑refresh modes and documented refresh cycle options simplify low‑power retention strategies and system refresh management.
• Robust supply range: Operates across a 3.0 V to 3.6 V supply window for tolerance to supply variation within 3.3 V system designs.
• Compact TSOP‑II package: 86‑pin TSOP‑II footprint (10.16 mm width) supports dense board-level memory implementations.

Why Choose IS45S32200E-7TLA2-TR?

The IS45S32200E-7TLA2-TR positions itself as a configurable 64‑Mbit SDRAM solution for designers who need synchronous, burstable memory with selectable timing and banked architecture. Its single 3.3 V supply, LVTTL interface, and documented timing options provide predictable behavior for systems that demand clock‑synchronous data transfers.

This device is appropriate for designs that require a 32‑bit parallel memory interface, programmable burst and CAS settings, and an option for extended ambient temperature operation. Detailed datasheet specifications and multiple speed grades support informed selection and system integration.

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