IS45S32200E-7TLA1-TR

The IS45S32200E-7TLA1-TR from Integrated Silicon Solution Inc. (ISSI) is a 64‑Mbit synchronous DRAM (SDRAM) device provided in an 86‑TSOP II package. It is a quad‑bank, fully synchronous parallel DRAM designed for 3.3 V systems requiring high‑speed, pipelined memory access.

Typical use cases are systems that need a 64‑Mbit SDRAM with LVTTL interface, programmable burst operation and selectable CAS latency for controlled latency and throughput in embedded or system memory applications. The device delivers deterministic timing characteristics useful for designs operating up to the -7 speed grade (143 MHz).

Key Features

• Core / Architecture  Quad‑bank synchronous DRAM architecture with internal bank operation and pipelined access for sustained data throughput.
• Memory Organization & Capacity  64‑Mbit density organized as 2M × 32 (per device specification) with quad‑bank operation to improve row access efficiency.
• Performance  -7 speed grade supports a clock frequency of 143 MHz and an access time from clock of 5.5 ns (CAS‑latency = 3).
• Programmable Burst and CAS  Programmable burst lengths (1, 2, 4, 8, full page) and programmable burst sequences (sequential/interleave); CAS latency selectable (2 or 3 clocks).
• Refresh and Self‑Refresh  Supports AUTO REFRESH and self‑refresh modes; refresh cycle options documented for device grades (e.g., 4096 refresh cycles per 16 ms for A2 grade).
• Interface & Signalling  LVTTL input interface with fully synchronous control where all signals are referenced to the positive clock edge.
• Power  Single supply operation from 3.0 V to 3.6 V (nominal 3.3 V).
• Package & Temperature  Supplied in an 86‑TSOP II (86‑TFSOP, 0.400" / 10.16 mm width) package with an operating temperature range of −40 °C to +85 °C (TA).

Typical Applications

• Embedded memory subsystems  For designs requiring a 64‑Mbit SDRAM with parallel LVTTL interface and programmable burst operation.
• Board‑level DRAM expansion  As a discrete high‑speed SDRAM component in systems that operate from a 3.3 V supply and require deterministic synchronous timing.
• Industrial electronics  Suitable for industrial temperature designs with the specified −40 °C to +85 °C operating range and TSOP II packaging.

Unique Advantages

• Deterministic synchronous timing:  Fully synchronous operation with all signals referenced to the rising clock edge simplifies timing analysis and system integration.
• Flexible burst and latency control:  Programmable burst lengths and CAS latency (2 or 3) enable tuning for different access patterns and system latency requirements.
• Quad‑bank architecture:  Internal bank organization improves row access/precharge hiding and supports random column access every clock cycle.
• Standard 3.3 V supply:  Single 3.0 V–3.6 V supply simplifies power rail design for legacy 3.3 V systems.
• Industrial temperature support:  Rated for −40 °C to +85 °C (TA), making it appropriate for temperature‑sensitive deployments within that range.
• Compact TSOP II package:  86‑pin TSOP‑II package (0.400" / 10.16 mm width) allows dense board placement while maintaining standard TSOP footprint compatibility.

Why Choose IS45S32200E-7TLA1-TR?

The IS45S32200E-7TLA1-TR provides a balanced combination of synchronous performance, flexible burst/CAS configuration, and industry‑range operating temperature in a compact 86‑TSOP II package. Its quad‑bank SDRAM architecture and LVTTL synchronous interface make it suitable for system memory roles where predictable timing and selectable latency are important.

This device is appropriate for designers and procurement teams specifying a 64‑Mbit SDRAM that requires a 3.3 V supply, programmable burst behavior, and industrial temperature capability. The part’s documented timing parameters and refresh modes support straightforward integration in systems that need defined, verifiable memory behavior.

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