IS45S32200E-7TLA1

The IS45S32200E-7TLA1 is a 64‑Mbit synchronous DRAM (SDRAM) organized internally as 524,288 × 32 bits × 4 banks, delivering high‑speed, pipelined memory access for systems that require parallel DRAM. It implements a fully synchronous interface with programmable burst operation and LVTTL signaling.

Designed for 3.3V memory systems, this device targets applications that need a compact TSOP‑II footprint and industrial temperature capability, while providing flexible timing and refresh options to match system performance and power requirements.

Key Features

• Core Architecture Quad‑bank SDRAM organization (524,288 × 32 × 4 banks) with pipelined operation for high throughput and bank interleaving to hide row access/precharge.
• High‑speed Operation Rated for up to 143 MHz clock frequency (‑7 speed grade) with programmable CAS latency options (2 or 3 clocks) and access time as low as 5.5 ns.
• Flexible Burst and Access Modes Programmable burst length (1, 2, 4, 8, full page) and burst sequence (sequential/interleave); supports burst read/write and burst read/single write operations with burst termination commands.
• Power and Interface Single 3.3 V power supply (3.0 V to 3.6 V) with LVTTL interface for command and control signals.
• Refresh and Reliability Supports AUTO REFRESH and self‑refresh modes; provides required refresh cycles per datasheet options (e.g., 4096 refresh cycles over specified intervals depending on grade).
• Package and Temperature Available in an 86‑pin TSOP‑II package (0.400", 10.16 mm width) and specified operating temperature range of −40 °C to +85 °C (TA).

Typical Applications

• Embedded Systems Use as main or buffer DRAM in embedded designs that require a 64‑Mbit SDRAM in a compact 86‑TSOP‑II package operating at 3.3 V.
• Industrial Control Suited for industrial temperature systems (−40 °C to +85 °C TA) where synchronous, banked memory and self‑refresh are required.
• Consumer and Networking Devices Provides parallel SDRAM storage for mid‑range consumer or networking products needing programmable burst modes and LVTTL interfaces.
• Memory Expansion Modules Fits designs that require 64‑Mbit density in TSOP‑II form factor for board‑level memory expansion and system upgrades.

Unique Advantages

• Quad‑bank Architecture: Four internal banks enable hidden row access/precharge to improve effective throughput for interleaved access patterns.
• Programmable Timing: CAS latency selectable (2 or 3 clocks) and multiple burst lengths allow designers to trade latency and throughput to match system timing.
• Compact TSOP‑II Packaging: 86‑pin TSOP‑II (0.400", 10.16 mm width) provides a small footprint for dense board layouts while retaining full SDRAM functionality.
• Industrial Temperature Range: Specified operation from −40 °C to +85 °C (TA) supports deployment in temperature‑sensitive environments.
• Single 3.3 V Supply with LVTTL Interface: Standard 3.3 V power and LVTTL signaling simplify integration into existing 3.3 V memory subsystems.
• Self‑Refresh and Flexible Refresh Options: Built‑in self‑refresh and programmable refresh behavior support low‑power retention and reliable long‑term operation.

Why Choose IS45S32200E-7TLA1?

The IS45S32200E-7TLA1 combines a quad‑bank SDRAM architecture with selectable timing and burst modes to provide a flexible 64‑Mbit memory solution for 3.3 V systems. Its industrial temperature rating and compact 86‑TSOP‑II package make it suitable for embedded, industrial control, and mid‑range consumer/networking designs that require predictable synchronous DRAM behavior.

This device is appropriate for engineers seeking a verifiable, specification‑driven DRAM component offering programmable latency and burst control, banked operation for improved throughput, and standard LVTTL interfacing for straightforward system integration.

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