IS45S32200E-7BLA1-TR

The IS45S32200E-7BLA1-TR is a 64Mbit synchronous DRAM (SDRAM) device from ISSI organized as 2M × 32 with a parallel memory interface and quad-bank architecture. It is designed for 3.3V memory systems and uses a pipelined synchronous architecture to support high-speed data transfers in systems requiring deterministic, clock-referenced memory access.

Built for embedded and system memory roles, this device provides programmable burst operation, selectable CAS latency and self-refresh capability, delivering predictable timing and timing flexibility for parallel SDRAM designs.

Key Features

• Core / Memory Architecture  64 Mbit SDRAM organized as 2M × 32 with internal bank architecture for improved access concurrency.
• Performance  Clock frequency rating at 143 MHz with access time of 5.5 ns (CAS latency = 3), enabling high-rate synchronous transfers.
• Interface & Timing  Parallel memory interface with LVTTL signaling support (as specified in the device family); programmable CAS latency (2 or 3 clocks) and programmable burst length (1, 2, 4, 8, full page) and burst sequence (sequential/interleave).
• Power  Single-supply operation with supply voltage range 3.0 V to 3.6 V (typical 3.3 V).
• Refresh & Low-Power Modes  Supports AUTO REFRESH and self-refresh modes; refresh handling provided per datasheet (e.g., 4096 refresh cycles options referenced in device documentation).
• Package & Temperature  90-ball TF-BGA package (90-TFBGA, 8 × 13) with an operating ambient temperature range of -40 °C to +85 °C (TA).

Typical Applications

• 3.3 V memory subsystems  Used as synchronous parallel DRAM in 3.3 V system memory designs that require clocked, banked DRAM organization.
• High-speed buffering and frame storage  Pipelined synchronous architecture and 143 MHz clock capability support high-rate data buffering and temporary frame/store operations.
• Embedded system memory  Provides predictable, programmable burst and CAS timing for embedded designs that use parallel SDRAM.

Unique Advantages

• Quad-bank organization: Improves access concurrency and helps hide row access/precharge overhead for more efficient burst transfers.
• Programmable timing and burst control: CAS latency selectable and multiple burst length/sequence options allow tuning for diverse system timing requirements.
• Single-supply operation: 3.0 V to 3.6 V supply range (typical 3.3 V) simplifies power rail requirements in standard SDRAM systems.
• Compact BGA package: 90-TFBGA (8 × 13) footprint offers a small-board-area solution for high-density memory placements.
• Wide ambient temperature support: Rated for -40 °C to +85 °C (TA), accommodating a broad range of operating environments specified for the device.

Why Choose IC DRAM 64MBIT PAR 90TFBGA?

The IS45S32200E-7BLA1-TR delivers a straightforward, clocked SDRAM solution for designs requiring 64 Mbit of parallel memory with flexible timing control and burst operation. Its 143 MHz class performance, programmable CAS latency and burst features are specified to help integrate synchronous memory with predictable, pipeline-based timing.

This device is suited to engineers specifying 3.3 V parallel SDRAM in compact BGA form factors and applications that benefit from internal banked architecture and self-refresh capabilities. The combination of package, voltage range and operating temperature provides a robust option for many system memory roles where the documented SDRAM feature set is required.

If you would like pricing or availability details for IS45S32200E-7BLA1-TR, request a quote or submit a quote request to evaluate integration into your design.