IS45S32200L-6BLA1

IC DRAM 64MBIT PARALLEL 90TFBGA
Part Description

IC DRAM 64MBIT PARALLEL 90TFBGA

Quantity 314 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package90-TFBGA (8x13)Memory FormatDRAMTechnologySDRAM
Memory Size64 MbitAccess Time5.4 nsGradeIndustrial
Clock Frequency166 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word PageN/APackaging90-TFBGA
Mounting MethodVolatileMemory InterfaceParallelMemory Organization2M x 32
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0002

Overview of IS45S32200L-6BLA1 – 64Mbit Parallel SDRAM (90-TFBGA)

The IS45S32200L-6BLA1 is a 64 Mbit synchronous DRAM (SDRAM) device organized as 2M × 32 with a parallel memory interface. It targets applications that require compact, high-speed volatile memory with a 90-TFBGA (8×13) package footprint.

Key attributes include a 166 MHz operating clock frequency, 5.4 ns access time, and a 3.0 V to 3.6 V supply range, supporting designs that need predictable SDRAM performance across a wide temperature range (-40 °C to 85 °C).

Key Features

  • Memory Architecture  Organized as 2M × 32 for a total capacity of 64 Mbit, implemented as SDRAM (volatile memory format).
  • Performance  Rated for a 166 MHz clock frequency with a specified access time of 5.4 ns, delivering synchronous DRAM timing suitable for parallel-memory systems.
  • Interface  Parallel memory interface compatible with standard DRAM system topologies.
  • Power  Operates from a 3.0 V to 3.6 V supply range.
  • Package  Supplied in a 90-TFBGA package (8×13 mm), offering a compact, board-mountable solution for space-constrained designs.
  • Environmental Range  Specified operating temperature range from -40 °C to 85 °C (TA), suitable for extended-temperature applications.

Typical Applications

  • Embedded systems  Use as parallel SDRAM storage where 64 Mbit capacity and synchronous timing are required.
  • Industrial equipment  Memory option for control and instrumentation systems that require operation across -40 °C to 85 °C.
  • Buffer and frame memory  Parallel SDRAM buffer for systems needing 166 MHz clocked access and 5.4 ns access timing.

Unique Advantages

  • Compact BGA footprint: The 90-TFBGA (8×13) package provides a space-efficient mounting option for PCB layouts with restricted area.
  • Predictable SDRAM timing: 166 MHz clock frequency and 5.4 ns access time enable consistent synchronous memory performance.
  • Wide operating temperature: Rated from -40 °C to 85 °C to support designs exposed to extended temperature ranges.
  • Standard voltage range: 3.0 V to 3.6 V supply compatibility for systems designed around common 3 V DRAM power rails.
  • Parallel interface compatibility: Direct fit for systems and controllers that utilize parallel DRAM architectures.

Why Choose IC DRAM 64MBIT PARALLEL 90TFBGA?

The IS45S32200L-6BLA1 positions itself as a straightforward 64 Mbit SDRAM solution combining a 2M × 32 organization, synchronous DRAM timing (166 MHz, 5.4 ns access), and a compact 90-TFBGA package. Its 3.0–3.6 V supply range and -40 °C to 85 °C operating window make it suitable for designs that require consistent SDRAM behavior across typical industrial temperature ranges.

This device is appropriate for engineers and procurement teams specifying parallel SDRAM for embedded systems, buffering applications, or other designs that match its capacity, timing, and package characteristics. The clear specification set supports predictable integration into existing parallel-memory architectures.

For pricing, availability, or to request a formal quote and lead-time information for IS45S32200L-6BLA1, submit an inquiry or request a quote through your preferred procurement channel.

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