IS45S32200L-6TLA1-TR

IC DRAM 64MBIT PAR 86TSOP II
Part Description

IC DRAM 64MBIT PAR 86TSOP II

Quantity 711 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package86-TSOP IIMemory FormatDRAMTechnologySDRAM
Memory Size64 MbitAccess Time5.4 nsGradeIndustrial
Clock Frequency166 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word PageN/APackaging86-TFSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceParallelMemory Organization2M x 32
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0002

Overview of IS45S32200L-6TLA1-TR – IC DRAM 64Mbit SDRAM, 86-TSOP II

The IS45S32200L-6TLA1-TR is a 64 Mbit volatile SDRAM organized as 2M × 32 with a parallel memory interface. It delivers high-speed operation with a 166 MHz clock frequency and a 5.4 ns access time in a compact 86-TSOP II (10.16 mm width) package.

This device is suited for designs that require on-board parallel DRAM memory with a 3.0 V to 3.6 V supply range and extended operating temperature from -40°C to 85°C, enabling deployment in systems subject to wide thermal conditions.

Key Features

  • Memory Architecture 64 Mbit SDRAM organized as 2M × 32 (parallel DRAM format) suitable for parallel memory implementations.
  • Performance Supports a 166 MHz clock frequency with a typical access time of 5.4 ns to meet high-speed system requirements.
  • Voltage and Power Operates from a 3.0 V to 3.6 V supply, providing compatibility with standard 3 V memory power rails.
  • Package Provided in an 86-TSOP II (0.400", 10.16 mm width) package for compact board-level integration.
  • Temperature Range Rated for operation from -40°C to 85°C (TA), supporting designs that require extended ambient temperature tolerance.
  • Interface Parallel memory interface (DRAM) for direct integration into parallel-memory architectures.

Typical Applications

  • Systems requiring parallel SDRAM memory — Used where a 2M × 32 parallel DRAM configuration is required for system memory or frame buffering.
  • Embedded designs with 3 V supply rails — Fits designs operating from 3.0 V to 3.6 V that need on-board SDRAM capacity.
  • Thermally demanding environments — Applicable to products that must operate across a -40°C to 85°C ambient temperature range.

Unique Advantages

  • High-frequency operation: 166 MHz clock support combined with a 5.4 ns access time enables responsive memory performance for time-critical tasks.
  • Wide operating temperature: -40°C to 85°C rating allows use in environments with broad temperature variations.
  • Compact TSOP II package: 86-TSOP II (10.16 mm width) offers a small board footprint for space-constrained designs.
  • Standard 3 V supply compatibility: 3.0 V to 3.6 V supply range aligns with common system power rails for straightforward integration.
  • Parallel interface organization: 2M × 32 memory organization supports parallel data paths and can simplify system memory interfacing.

Why Choose IC DRAM 64MBIT PAR 86TSOP II?

The IS45S32200L-6TLA1-TR combines a 64 Mbit SDRAM architecture with high-speed 166 MHz operation and a compact 86-TSOP II package, delivering a balance of performance and board-level density. Its 2M × 32 organization and parallel interface make it suitable for systems that require straightforward DRAM integration and responsive access times.

Manufactured by ISSI (Integrated Silicon Solution Inc), this device serves designs that demand consistent electrical characteristics—3.0 V to 3.6 V operation—and extended ambient temperature capability (-40°C to 85°C). It is appropriate for engineers and procurement teams specifying parallel SDRAM for embedded or industrial-class systems.

Request a quote or contact sales to discuss availability, pricing, and lead times for the IS45S32200L-6TLA1-TR.

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