IS45S32200L-7BLA1

IC DRAM 64MBIT PAR 90TFBGA
Part Description

IC DRAM 64MBIT PAR 90TFBGA

Quantity 1,864 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package90-TFBGA (8x13)Memory FormatDRAMTechnologySDRAM
Memory Size64 MbitAccess Time5.4 nsGradeIndustrial
Clock Frequency143 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word PageN/APackaging90-TFBGA
Mounting MethodVolatileMemory InterfaceParallelMemory Organization2M x 32
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0002

Overview of IS45S32200L-7BLA1 – IC DRAM 64MBIT PAR 90TFBGA

The IS45S32200L-7BLA1 is a 64 Mbit volatile DRAM organized as 2M × 32, implemented as SDRAM with a parallel memory interface. It provides a clock frequency of 143 MHz and an access time of 5.4 ns, and is offered in a 90‑TFBGA (8×13) package for board-mounted applications.

This device is suited for designs that require external parallel SDRAM memory with operation from a 3.0 V to 3.6 V supply and an ambient temperature range of -40°C to 85°C.

Key Features

  • Memory Core 64 Mbit capacity organized as 2M × 32, implemented as SDRAM for parallel memory access.
  • Performance 143 MHz clock frequency and 5.4 ns access time as specified for timing-sensitive memory operations.
  • Voltage Operates from a 3.0 V to 3.6 V supply range, matching common 3 V memory power domains.
  • Interface Parallel memory interface suitable for systems designed to use parallel SDRAM devices.
  • Package 90‑TFBGA (8×13) supplier device package for surface mounting on printed circuit boards.
  • Operating Temperature Specified ambient operating range of -40°C to 85°C (TA), supporting deployments across a broad temperature envelope.

Typical Applications

  • Parallel SDRAM subsystems — Use as external DRAM in boards and modules that require a 2M × 32 parallel SDRAM device.
  • Embedded memory expansion — Provides 64 Mbit of volatile SDRAM for designs needing external memory capacity with defined timing and voltage.
  • Industrial-temperature systems — Suitable for systems that must operate across -40°C to 85°C ambient temperatures.

Unique Advantages

  • Compact 90‑TFBGA packaging: 90‑ball TFBGA (8×13) format facilitates surface-mount integration on space-conscious PCBs.
  • Defined performance metrics: 143 MHz clock frequency and 5.4 ns access time provide clear timing characteristics for system design and verification.
  • Standard 3.0–3.6 V supply: Compatible with common 3 V memory power rails, simplifying power supply selection.
  • Parallel 2M × 32 organization: Native organization delivers 64 Mbit capacity in a parallel SDRAM configuration for straightforward interface mapping.
  • Wide operating temperature range: -40°C to 85°C specified ambient range supports a variety of deployment environments.

Why Choose IS45S32200L-7BLA1?

The IS45S32200L-7BLA1 by ISSI is positioned as a straightforward 64 Mbit parallel SDRAM device with clear electrical and timing specifications—143 MHz clocking, 5.4 ns access time, and a 3.0–3.6 V supply range—delivered in a 90‑TFBGA (8×13) package. These attributes make it appropriate for designs that require defined SDRAM timing, a parallel interface, and operation across a wide ambient temperature range.

This device is suitable for engineers and procurement teams specifying external DRAM for board-level memory expansion where the listed capacity, package, voltage, timing, and temperature characteristics meet system requirements.

Request a quote or submit an inquiry to check availability and pricing for the IS45S32200L-7BLA1.

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