IS45S32200L-7BLA2

IC DRAM 64MBIT PAR 90TFBGA
Part Description

IC DRAM 64MBIT PAR 90TFBGA

Quantity 462 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package90-TFBGA (8x13)Memory FormatDRAMTechnologySDRAM
Memory Size64 MbitAccess Time5.4 nsGradeAutomotive
Clock Frequency143 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 105°C (TA)Write Cycle Time Word PageN/APackaging90-TFBGA
Mounting MethodVolatileMemory InterfaceParallelMemory Organization2M x 32
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0002

Overview of IS45S32200L-7BLA2 – 64 Mbit SDRAM, 90‑TFBGA

The IS45S32200L-7BLA2 is a 64 Mbit volatile SDRAM device from ISSI (Integrated Silicon Solution Inc) organized as 2M × 32 with a parallel memory interface in a 90-TFBGA (8×13) package. It provides standard DRAM storage with a specified clock frequency of 143 MHz and an access time of 5.4 ns.

This device operates from a 3.0 V to 3.6 V supply and supports an ambient operating temperature range of -40°C to 105°C, making it suitable for systems that require a compact, parallel SDRAM solution in a ball-grid array package.

Key Features

  • Memory Core 64 Mbit capacity organized as 2M × 32 in DRAM format for volatile system memory applications.
  • Performance SDRAM technology with a clock frequency of 143 MHz and an access time of 5.4 ns to support high-speed read/write cycles.
  • Interface Parallel memory interface for direct integration with parallel memory controllers and bus architectures.
  • Power Operates from a 3.0 V to 3.6 V supply voltage range.
  • Package 90-TFBGA package (8×13) supplied in a TFBGA footprint for compact board-level implementation.
  • Operating Temperature Specified ambient temperature range of -40°C to 105°C (TA) for extended environmental tolerance.

Unique Advantages

  • Compact ball-grid package: The 90-TFBGA (8×13) package provides a small PCB footprint suited to space-constrained designs.
  • Parallel interface compatibility: Parallel memory interface supports designs that require direct parallel DRAM connectivity.
  • High-speed access: 143 MHz clock rate and 5.4 ns access time enable rapid memory transactions where timing is critical.
  • Wide supply range: 3.0 V to 3.6 V operation offers flexibility across systems using nominal 3.3 V rails.
  • Extended temperature rating: -40°C to 105°C ambient operation supports deployments in a broad range of thermal environments.

Why Choose IC DRAM 64MBIT PAR 90TFBGA?

The IS45S32200L-7BLA2 positions itself as a straightforward, specification-driven SDRAM option for designs that need 64 Mbit of parallel DRAM in a compact 90-TFBGA package. Its combination of 2M × 32 organization, 143 MHz clocking, and 5.4 ns access time delivers defined performance characteristics for system memory buffering and data storage tasks.

Manufactured by ISSI (Integrated Silicon Solution Inc), this device is appropriate for engineers and procurement teams seeking a documented SDRAM component with a clear voltage range and an extended operating temperature window for board-level integration.

Request a quote or submit an RFQ to obtain pricing and availability for the IS45S32200L-7BLA2.

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