IS45S32200L-7BLA2-TR

IC DRAM 64MBIT PAR 90TFBGA
Part Description

IC DRAM 64MBIT PAR 90TFBGA

Quantity 759 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package90-TFBGA (8x13)Memory FormatDRAMTechnologySDRAM
Memory Size64 MbitAccess Time5.4 nsGradeAutomotive
Clock Frequency143 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 105°C (TA)Write Cycle Time Word PageN/APackaging90-TFBGA
Mounting MethodVolatileMemory InterfaceParallelMemory Organization2M x 32
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0002

Overview of IS45S32200L-7BLA2-TR – IC DRAM 64MBIT PAR 90TFBGA

The IS45S32200L-7BLA2-TR is a 64 Mbit volatile SDRAM organized as 2M × 32, supplied by ISSI (Integrated Silicon Solution Inc). It delivers parallel SDRAM memory in a compact 90‑TFBGA (8×13) package for designs that require fast, synchronous dynamic RAM.

This device targets systems that need a mid-density parallel DRAM with defined performance and environmental ranges, providing operation at a 143 MHz clock frequency, 5.4 ns access time, and supply voltage between 3.0 V and 3.6 V.

Key Features

  • Memory Core 64 Mbit SDRAM organized as 2M × 32, implemented as volatile dynamic RAM for parallel memory architectures.
  • Performance Supports a clock frequency of 143 MHz with an access time of 5.4 ns, suitable for timing-sensitive parallel memory applications.
  • Interface Parallel memory interface compatible with parallel DRAM system designs.
  • Power Operates from a 3.0 V to 3.6 V supply range.
  • Package Supplied in a 90‑TFBGA (8×13) package, enabling compact PCB placement and high-density mounting.
  • Operating Temperature Rated for −40 °C to 105 °C (TA) to support extended-temperature applications.

Typical Applications

  • Embedded memory subsystems Use as a 64 Mbit parallel SDRAM component where a 2M × 32 organization and 143 MHz operation are required.
  • Industrial controllers Suitable for control and data buffering functions that require operation across −40 °C to 105 °C ambient conditions.
  • Networking and communications equipment Applicable for parallel-memory buffering and packet processing tasks that need defined access times and clock rates.

Unique Advantages

  • Mid‑density memory in a compact package: 64 Mbit capacity in a 90‑TFBGA (8×13) package enables space-efficient board layouts.
  • Defined high-speed timing: 143 MHz clock frequency with 5.4 ns access time provides predictable performance for timing-sensitive designs.
  • Wide supply range: 3.0 V to 3.6 V operation simplifies integration into systems using standard 3.3 V rails.
  • Extended operating temperature: −40 °C to 105 °C rating supports deployment in environments with broad temperature variation.
  • Parallel interface: Direct parallel DRAM interface for systems designed around parallel memory buses.
  • Manufacturer backing: Produced by ISSI (Integrated Silicon Solution Inc), providing a known supplier for sourcing and technical reference.

Why Choose IS45S32200L-7BLA2-TR?

The IS45S32200L-7BLA2-TR is positioned for designs that require a reliable 64 Mbit parallel SDRAM with clear electrical and timing specifications. Its 2M × 32 organization, 143 MHz clock capability, and 5.4 ns access time deliver predictable memory performance while the 90‑TFBGA package supports compact board-level integration.

This device is suitable for engineers specifying mid-density SDRAM in embedded, industrial, and communications equipment where a defined voltage range (3.0 V–3.6 V) and extended operating temperature (−40 °C to 105 °C) are required. Supplied by ISSI, it offers consistency for designs needing a standard parallel DRAM element.

Request a quote or submit an inquiry for pricing and availability for the IS45S32200L-7BLA2-TR to evaluate it for your next design.

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