IS45S32200L-7TLA1

IC DRAM 64MBIT PAR 86TSOP II
Part Description

IC DRAM 64MBIT PAR 86TSOP II

Quantity 1,191 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package86-TSOP IIMemory FormatDRAMTechnologySDRAM
Memory Size64 MbitAccess Time5.4 nsGradeIndustrial
Clock Frequency143 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word PageN/APackaging86-TFSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceParallelMemory Organization2M x 32
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0002

Overview of IS45S32200L-7TLA1 – IC DRAM 64MBIT PAR 86TSOP II

The IS45S32200L-7TLA1 is a 64 Mbit volatile SDRAM device organized as 2M × 32 with a parallel memory interface. It provides synchronous DRAM performance with a clock frequency of 143 MHz and an access time of 5.4 ns.

This device is supplied in an 86-TSOP II (86-TFSOP, 0.400", 10.16 mm width) package, operates from 3.0 V to 3.6 V, and supports an ambient operating temperature range of −40°C to 85°C.

Key Features

  • Memory Architecture 64 Mbit SDRAM organized as 2M × 32, providing a parallel DRAM format for systems that require synchronous dynamic memory.
  • Performance Synchronous SDRAM operation at a clock frequency of 143 MHz with an access time of 5.4 ns for deterministic read/write timing.
  • Voltage and Power Operates from 3.0 V to 3.6 V, matching standard 3 V-class system supplies.
  • Interface Parallel memory interface suitable for integration into parallel DRAM memory buses.
  • Package Available in 86-TSOP II (86-TFSOP) package with a 0.400" (10.16 mm) width for compact board-level implementation.
  • Temperature Range Specified for operation from −40°C to 85°C (TA) to support a broad range of ambient conditions.

Unique Advantages

  • Mid-density memory in a compact package: 64 Mbit capacity organized as 2M × 32 delivers a balance of density and board footprint using the 86-TSOP II package.
  • Synchronous operation with defined timing: 143 MHz clock and 5.4 ns access time provide explicit timing characteristics for system memory design.
  • 3.0 V–3.6 V supply compatibility: Supports common 3 V system rails for straightforward power management integration.
  • Parallel DRAM interface: Enables direct connection to parallel memory controllers and legacy parallel-memory architectures.
  • Extended ambient temperature support: −40°C to 85°C operating range accommodates a wide set of environmental conditions.

Why Choose IS45S32200L-7TLA1?

The IS45S32200L-7TLA1 positions itself as a straightforward SDRAM building block for designs that require a 64 Mbit parallel DRAM with defined synchronous timing, compact TSOP II packaging, and 3.0 V-class power operation. Its specification set—2M × 32 organization, 143 MHz clock, 5.4 ns access time, and −40°C to 85°C operating range—makes it suitable for systems that need predictable SDRAM performance and a compact footprint.

This device is appropriate for designers and procurement teams seeking a documented SDRAM component with clear electrical, timing, and packaging specifications to support board-level memory implementations.

Request a quote or contact sales to check availability, lead times, and volume pricing for the IS45S32200L-7TLA1.

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