IS45S32200L-7TLA1-TR

The IS45S32200L-7TLA1-TR is a 64 Mbit volatile SDRAM device organized as 2M × 32 with a parallel memory interface. It delivers specified clock operation up to 143 MHz and a 5.4 ns access time for applications that require synchronous DRAM timing and predictable latency.

Manufactured by Integrated Silicon Solution Inc (ISSI), this device is available in an 86-TSOP II package and supports a 3.0 V to 3.6 V supply range and an extended ambient operating temperature from −40°C to 85°C.

Key Features

• Memory Architecture  64 Mbit capacity organized as 2M × 32, providing a wide 32-bit data path for parallel memory implementations.
• SDRAM Technology  Synchronous DRAM core operating with a parallel interface for timing-determined access and integration into synchronous memory subsystems.
• Performance  Supports a clock frequency of 143 MHz and an access time of 5.4 ns, enabling deterministic memory access in time-critical designs.
• Power  Operating supply voltage range of 3.0 V to 3.6 V for compatibility with standard 3 V SDRAM power rails.
• Package  86-TSOP II (86-TFSOP, 0.400" / 10.16 mm width) surface-mount package suitable for compact board layouts.
• Operating Temperature  Specified ambient range −40°C to 85°C for deployments across a broad environmental envelope.
• Volatile Memory  Data is stored in volatile DRAM cells; device requires refresh and system management consistent with SDRAM operation.

Typical Applications

• Parallel memory subsystems  Used where a 64 Mbit, 32-bit wide parallel SDRAM is required for buffering or working memory.
• Embedded systems  Suitable for designs that need synchronous parallel DRAM with specified timing and supply characteristics.
• Compact board-level designs  TSOP II packaging enables higher-density PCB routing in space-constrained assemblies.

Unique Advantages

• 32-bit wide organization: 2M × 32 layout provides a wide data path that can reduce the number of devices needed for certain memory widths.
• Defined timing performance: 143 MHz clock rating with 5.4 ns access time offers predictable synchronous access for time-sensitive applications.
• Standard 3 V supply compatibility: 3.0 V–3.6 V operating range aligns with common 3 V SDRAM power rails for straightforward power design.
• Extended ambient range: −40°C to 85°C operating temperature supports deployment across a wide range of environmental conditions.
• Compact TSOP II package: 86-TSOP II (10.16 mm width) provides a compact surface-mount footprint for dense PCB layouts.
• Manufacturer support: Available from Integrated Silicon Solution Inc (ISSI), ensuring access to device documentation and specifications.

Why Choose IS45S32200L-7TLA1-TR?

The IS45S32200L-7TLA1-TR combines a 64 Mbit SDRAM core organized as 2M × 32 with defined synchronous timing (143 MHz clock, 5.4 ns access) and a compact 86-TSOP II package, offering a straightforward memory building block for systems that require a parallel SDRAM solution. Its 3.0 V–3.6 V supply range and −40°C to 85°C operating temperature make it suitable for designs needing stable behavior across common industrial temperature ranges.

This device is appropriate for engineers specifying a verified parallel SDRAM component from ISSI where predictable timing, a wide data bus, and compact packaging are key selection criteria.

If you need pricing or availability information, request a quote or submit an inquiry to obtain a formal quotation and lead-time details for the IS45S32200L-7TLA1-TR.