IS45S32200L-7TLA2-TR
| Part Description |
IC DRAM 64MBIT PAR 86TSOP II |
|---|---|
| Quantity | 833 Available (as of May 4, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 86-TSOP II | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Mbit | Access Time | 5.4 ns | Grade | Automotive | ||
| Clock Frequency | 143 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 105°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 86-TFSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 2M x 32 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0002 |
Overview of IS45S32200L-7TLA2-TR – IC DRAM 64Mbit PAR 86TSOP II
The IS45S32200L-7TLA2-TR is a 64 Mbit volatile SDRAM device organized as 2M × 32 with a parallel memory interface. Designed for systems that require on-board parallel DRAM, it delivers defined timing characteristics and a compact TSOP II package for space-constrained designs.
Key technical attributes include a 143 MHz clock frequency, 5.4 ns access time, a 3.0–3.6 V supply range, and an extended operating temperature range of −40 °C to 105 °C, providing deterministic memory performance across a wide thermal envelope.
Key Features
- Memory Core SDRAM volatile memory providing a 64 Mbit capacity for transient data storage.
- Capacity & Organization Organized as 2M × 32 to support 32-bit wide parallel data transfers.
- Performance Operates with a clock frequency up to 143 MHz and a specified access time of 5.4 ns.
- Interface Parallel memory interface suitable for systems requiring conventional DRAM bus architectures.
- Power Supply voltage range of 3.0 V to 3.6 V for standard 3 V DRAM system integration.
- Package Available in an 86-TSOP II / 86-TFSOP footprint (0.400" / 10.16 mm width) for compact board mounting.
- Operating Temperature Specified for −40 °C to 105 °C ambient (TA) to support extended temperature operation.
Unique Advantages
- Deterministic timing: 5.4 ns access time and a 143 MHz clock frequency provide clear timing parameters for memory subsystem design.
- Wide operating range: −40 °C to 105 °C rating enables deployment in environments with extended temperature requirements.
- Compact TSOP II package: 86-TSOP II (0.400", 10.16 mm width) minimizes PCB area while maintaining a 32-bit parallel interface.
- Standard supply voltage: 3.0–3.6 V compatibility aligns with common 3 V SDRAM system rails.
- Straightforward memory organization: 2M × 32 configuration simplifies bus width planning for parallel architectures.
Why Choose IS45S32200L-7TLA2-TR?
The IS45S32200L-7TLA2-TR offers a focused set of SDRAM capabilities—64 Mbit density, 2M × 32 organization, 143 MHz clocking, and a 5.4 ns access time—packaged in an 86-TSOP II footprint and rated for −40 °C to 105 °C operation. These characteristics make it suitable for designs that require predictable parallel DRAM behavior in a compact form factor.
Manufactured by ISSI (Integrated Silicon Solution Inc), this device is appropriate for engineers specifying parallel SDRAM with defined timing, a standard 3.0–3.6 V supply domain, and extended temperature tolerance. The combination of package, density, and operating range supports robust integration into embedded and industrial memory subsystems.
Request a quote or submit an inquiry for IS45S32200L-7TLA2-TR to obtain pricing, lead time and availability details.
