IS45S32200L-7BLA1-TR

IC DRAM 64MBIT PAR 90TFBGA
Part Description

IC DRAM 64MBIT PAR 90TFBGA

Quantity 195 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package90-TFBGA (8x13)Memory FormatDRAMTechnologySDRAM
Memory Size64 MbitAccess Time5.4 nsGradeIndustrial
Clock Frequency143 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word PageN/APackaging90-TFBGA
Mounting MethodVolatileMemory InterfaceParallelMemory Organization2M x 32
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0002

Overview of IS45S32200L-7BLA1-TR – IC DRAM 64MBIT PAR 90TFBGA

The IS45S32200L-7BLA1-TR is a 64 Mbit synchronous DRAM (SDRAM) device organized as 2M × 32 with a parallel memory interface. It provides defined timing characteristics and electrical requirements for systems needing external DRAM storage.

Key electrical and mechanical parameters include a clock frequency of 143 MHz, 5.4 ns access time, an operating voltage range of 3.0 V to 3.6 V, and an industrial operating temperature range of −40 °C to 85 °C, all delivered in a 90‑TFBGA (8×13) package.

Key Features

  • Memory Type  Volatile SDRAM organized as 2M × 32 for a total memory size of 64 Mbit.
  • Performance  Supports a clock frequency up to 143 MHz with an access time of 5.4 ns, enabling predictable synchronous read/write timing.
  • Interface  Parallel memory interface compatible with standard SDRAM system architectures.
  • Power  Operates from a 3.0 V to 3.6 V supply range.
  • Package  Supplied in a 90‑TFBGA package (8×13) intended for soldered PCB mounting.
  • Temperature Range  Rated for operation from −40 °C to 85 °C (TA).

Unique Advantages

  • Defined synchronous performance: Clock frequency of 143 MHz and 5.4 ns access time provide measurable timing for system design and validation.
  • Compact BGA footprint: The 90‑TFBGA (8×13) package enables board space optimization while supporting a 32‑bit data organization.
  • Wide operating voltage: 3.0 V to 3.6 V supply range supports designs targeting 3.3 V rails and similar power domains.
  • Industrial temperature rating: −40 °C to 85 °C operation suits temperature‑varied environments where defined thermal performance is required.
  • Clear memory organization: 2M × 32 arrangement simplifies address and data bus planning for parallel SDRAM implementations.

Why Choose IC DRAM 64MBIT PAR 90TFBGA?

The IS45S32200L-7BLA1-TR positions itself as a straightforward SDRAM option when a 64 Mbit, 32‑bit parallel memory is required. Its documented clock and access characteristics, defined voltage range, and operating temperature make it suitable for designs that need deterministic external DRAM behavior and a compact BGA package.

This device is appropriate for engineers and procurement teams specifying external synchronous DRAM with clear electrical and mechanical parameters, offering predictable integration into systems that support a parallel SDRAM interface.

Request a quote or contact the supplier to discuss pricing, availability, and lead times for IS45S32200L-7BLA1-TR.

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