IS45S32200L-6TLA2

The IS45S32200L-6TLA2 from Integrated Silicon Solution Inc. is a 64 Mbit volatile SDRAM device organized as 2M × 32 with a parallel memory interface. It provides a 166 MHz clocking capability and a 5.4 ns access time for designs that require fast, parallel DRAM storage.

Packaged in an 86-TSOP II (10.16 mm width) form factor and specified for operation from -40°C to 105°C with a 3.0 V to 3.6 V supply range, this SDRAM is suited to systems that need compact, temperature-tolerant parallel memory modules.

Key Features

• Memory Core  64 Mbit SDRAM organized as 2M × 32 to support wide parallel data paths and straightforward memory mapping.
• Performance  166 MHz clock frequency with a 5.4 ns access time to meet timing requirements for high-speed parallel memory access.
• Electrical  Operates from 3.0 V to 3.6 V supply voltage, matching standard 3 V SDRAM system rails.
• Package  86-TSOP II (86-TFSOP, 0.400", 10.16 mm width) supplier device package for compact board-level placement.
• Temperature Range  Specified operating temperature of -40°C to 105°C (TA) for deployment in temperature-challenging environments.
• Interface & Type  Parallel DRAM interface; volatile memory type intended for temporary data storage in active systems.

Typical Applications

• Embedded Memory Expansion  Provides 64 Mbit of parallel SDRAM capacity for embedded systems that require wide data buses and fast access.
• Industrial Control Equipment  Temperature rating to -40°C to 105°C supports use in industrial controllers and instrumentation with parallel memory requirements.
• Networking and Communications Modules  Parallel SDRAM with 2M × 32 organization can serve as working memory in networked devices and communication boards.
• Consumer and Professional Electronics  Compact 86-TSOP II package enables integration into space-constrained devices that use parallel DRAM.

Unique Advantages

• Compact TSOP II Packaging: Enables board space savings with an 86-TSOP II footprint (10.16 mm width) for dense layouts.
• Wide Operating Voltage: 3.0 V to 3.6 V supply range aligns with common 3 V SDRAM systems for straightforward power integration.
• High-Speed Parallel Access: 166 MHz clock and 5.4 ns access time support applications requiring rapid parallel memory operations.
• Wide Temperature Range: -40°C to 105°C rating gives thermal headroom for challenging operating environments.
• Wide Data Path Organization: 2M × 32 configuration simplifies implementation of 32-bit parallel data buses.

Why Choose IS45S32200L-6TLA2?

The IS45S32200L-6TLA2 combines a 64 Mbit SDRAM core with 2M × 32 organization, 166 MHz clocking, and a compact 86-TSOP II package to deliver a straightforward parallel memory option for systems that require fast access and a wide data path. Its 3.0 V–3.6 V supply and -40°C to 105°C operating range make it suitable for designs where established 3 V SDRAM operation and thermal resilience are needed.

This device is appropriate for engineers specifying parallel DRAM capacity in embedded systems, industrial equipment, networking modules, and space-constrained electronics. Backed by Integrated Silicon Solution Inc. product documentation, the IS45S32200L-6TLA2 offers predictable electrical and mechanical characteristics for reliable board-level integration.

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