IS45S32200L-6BLA1-TR

IC DRAM 64MBIT PARALLEL 90TFBGA
Part Description

IC DRAM 64MBIT PARALLEL 90TFBGA

Quantity 1,450 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package90-TFBGA (8x13)Memory FormatDRAMTechnologySDRAM
Memory Size64 MbitAccess Time5.4 nsGradeIndustrial
Clock Frequency166 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word PageN/APackaging90-TFBGA
Mounting MethodVolatileMemory InterfaceParallelMemory Organization2M x 32
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0002

Overview of IS45S32200L-6BLA1-TR – IC DRAM 64MBIT PARALLEL 90TFBGA

The IS45S32200L-6BLA1-TR is a 64 Mbit volatile SDRAM device organized as 2M × 32 with a parallel memory interface. It is supplied in a 90‑TFBGA (8×13) package and is designed for systems that require a compact, parallel SDRAM component.

This device offers a 166 MHz clock frequency and a 5.4 ns access time, operates from 3.0 V to 3.6 V, and supports an ambient temperature range of −40 °C to 85 °C, making it suitable for designs that need defined speed, voltage, and temperature characteristics.

Key Features

  • Memory Architecture 64 Mbit SDRAM organized as 2M × 32, providing a 32‑bit parallel data path for direct bus interfacing.
  • Performance Clock frequency up to 166 MHz with an access time of 5.4 ns, enabling predictable read/write timing for parallel memory systems.
  • Power Operates from a 3.0 V to 3.6 V supply range, compatible with standard 3 V SDRAM power domains.
  • Package 90‑TFBGA package (8 × 13) for compact board footprint and surface-mount assembly.
  • Operating Temperature Specified ambient range of −40 °C to 85 °C, supporting deployment across a wide temperature span.
  • Interface Parallel DRAM interface with standard SDRAM behavior and memory format suitable for bus-mapped designs.

Typical Applications

  • Parallel SDRAM Memory Replacement Drop-in use where a 64 Mbit parallel SDRAM in a 90‑TFBGA footprint is required.
  • Memory Expansion Systems that require a 2M × 32 organization to meet address/data mapping and bandwidth needs.
  • Temperature-Sensitive Systems Applications that need operation across −40 °C to 85 °C ambient conditions while using a 3.0–3.6 V supply.

Unique Advantages

  • Defined SDRAM Performance: 166 MHz clock and 5.4 ns access time provide clear timing characteristics for system integration and timing closure.
  • 32‑Bit Parallel Data Path: 2M × 32 organization simplifies interfacing with 32‑bit system buses and reduces external data bus logic.
  • Compact BGA Package: 90‑TFBGA (8×13) minimizes board area while providing a robust surface-mount form factor.
  • Wide Supply Range: 3.0 V to 3.6 V operation supports compatibility with common 3 V power rails.
  • Extended Ambient Rating: −40 °C to 85 °C ambient specification supports designs that require extended temperature operation.
  • Manufacturer: Produced by Integrated Silicon Solution Inc (ISSI), identified by the IS45S32200L-6BLA1-TR part number.

Why Choose IC DRAM 64MBIT PARALLEL 90TFBGA?

The IS45S32200L-6BLA1-TR positions itself as a specification‑driven SDRAM component for designs that need a defined 64 Mbit parallel memory solution. Its combination of 2M × 32 organization, 166 MHz clock, and 5.4 ns access time offers predictable performance for parallel memory architectures.

This device is suited for engineers and procurement teams seeking a compact 90‑TFBGA SDRAM with a standard 3.0–3.6 V supply range and an ambient operating range of −40 °C to 85 °C. It provides a clear, verifiable set of electrical and mechanical characteristics for board-level memory integration.

Request a quote or contact sales to inquire about availability, lead times, and pricing for the IS45S32200L-6BLA1-TR.

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