IS45S32200L-6BLA1-TR
| Part Description |
IC DRAM 64MBIT PARALLEL 90TFBGA |
|---|---|
| Quantity | 1,450 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 90-TFBGA (8x13) | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Mbit | Access Time | 5.4 ns | Grade | Industrial | ||
| Clock Frequency | 166 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 90-TFBGA | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 2M x 32 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0002 |
Overview of IS45S32200L-6BLA1-TR – IC DRAM 64MBIT PARALLEL 90TFBGA
The IS45S32200L-6BLA1-TR is a 64 Mbit volatile SDRAM device organized as 2M × 32 with a parallel memory interface. It is supplied in a 90‑TFBGA (8×13) package and is designed for systems that require a compact, parallel SDRAM component.
This device offers a 166 MHz clock frequency and a 5.4 ns access time, operates from 3.0 V to 3.6 V, and supports an ambient temperature range of −40 °C to 85 °C, making it suitable for designs that need defined speed, voltage, and temperature characteristics.
Key Features
- Memory Architecture 64 Mbit SDRAM organized as 2M × 32, providing a 32‑bit parallel data path for direct bus interfacing.
- Performance Clock frequency up to 166 MHz with an access time of 5.4 ns, enabling predictable read/write timing for parallel memory systems.
- Power Operates from a 3.0 V to 3.6 V supply range, compatible with standard 3 V SDRAM power domains.
- Package 90‑TFBGA package (8 × 13) for compact board footprint and surface-mount assembly.
- Operating Temperature Specified ambient range of −40 °C to 85 °C, supporting deployment across a wide temperature span.
- Interface Parallel DRAM interface with standard SDRAM behavior and memory format suitable for bus-mapped designs.
Typical Applications
- Parallel SDRAM Memory Replacement Drop-in use where a 64 Mbit parallel SDRAM in a 90‑TFBGA footprint is required.
- Memory Expansion Systems that require a 2M × 32 organization to meet address/data mapping and bandwidth needs.
- Temperature-Sensitive Systems Applications that need operation across −40 °C to 85 °C ambient conditions while using a 3.0–3.6 V supply.
Unique Advantages
- Defined SDRAM Performance: 166 MHz clock and 5.4 ns access time provide clear timing characteristics for system integration and timing closure.
- 32‑Bit Parallel Data Path: 2M × 32 organization simplifies interfacing with 32‑bit system buses and reduces external data bus logic.
- Compact BGA Package: 90‑TFBGA (8×13) minimizes board area while providing a robust surface-mount form factor.
- Wide Supply Range: 3.0 V to 3.6 V operation supports compatibility with common 3 V power rails.
- Extended Ambient Rating: −40 °C to 85 °C ambient specification supports designs that require extended temperature operation.
- Manufacturer: Produced by Integrated Silicon Solution Inc (ISSI), identified by the IS45S32200L-6BLA1-TR part number.
Why Choose IC DRAM 64MBIT PARALLEL 90TFBGA?
The IS45S32200L-6BLA1-TR positions itself as a specification‑driven SDRAM component for designs that need a defined 64 Mbit parallel memory solution. Its combination of 2M × 32 organization, 166 MHz clock, and 5.4 ns access time offers predictable performance for parallel memory architectures.
This device is suited for engineers and procurement teams seeking a compact 90‑TFBGA SDRAM with a standard 3.0–3.6 V supply range and an ambient operating range of −40 °C to 85 °C. It provides a clear, verifiable set of electrical and mechanical characteristics for board-level memory integration.
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