MT28F640J3BS-115 MET

The MT28F640J3BS-115 MET is a 64 Mbit non-volatile FLASH memory device with a parallel interface and a 64-ball FBGA package. It implements NOR-style Q-FLASH architecture with x8/x16 memory organization and is optimized for systems that require reliable parallel flash storage with fast read access.

Key device characteristics include a 115 ns read access time (64Mb option), 2.7 V to 3.6 V supply range, and an extended operating temperature range of -40°C to +85°C, making it suitable for designs that demand robust non-volatile code or data storage in compact BGA form factors.

Key Features

• Memory Core and Organization 64 Mbit FLASH offered in x8/x16 organization (8M × 8 or 4M × 16) with sixty-four 128 KB erase blocks for the 64Mb device.
• Performance 115 ns asynchronous page mode read access time for the 64Mb device, plus a 25 ns secondary read timing for page-mode operations.
• Power VCC, VCCQ, and VPEN operate from 2.7 V to 3.6 V, supporting typical 3.0 V system supplies and application programming within the same range.
• Package 64-ball FBGA package (10 × 13 mm) in a compact footprint for high-density board designs.
• Endurance and Data Protection Up to 100,000 erase cycles per block and enhanced data protection features including a 128-bit protection register, flexible sector locking, and sector erase/program lockout during power transitions.
• Programming and Reliability Automatic write and erase algorithms with a 5.6 µs-per-byte effective programming time using the write buffer; automatic suspend options for erase/program operations (suspend-to-read, suspend-to-program).
• Identification and Security 64-bit unique device identifier and 64-bit user-programmable OTP cells for device tracking and one-time programmable data; Common Flash Interface (CFI) and Scalable Command Set supported.
• Compatibility and Interface Industry-standard pinout with fully TTL-compatible inputs and outputs for straightforward integration into parallel-memory systems.

Typical Applications

• Firmware and code storage — Store executable code and firmware where 64 Mbit density, parallel access, and 115 ns read performance are required.
• System boot and BIOS — Use as non-volatile boot/storage memory in systems that require a compact FBGA package and industry-standard pinout.
• Embedded storage — Retain configuration, calibration, or application data in designs that need OTP capability and unique device identification.

Unique Advantages

• Direct parallel integration: Parallel interface and industry-standard pinout enable straightforward replacement or integration into existing parallel-memory designs.
• Robust erase block architecture: Sixty-four 128 KB erase blocks (for the 64Mb device) simplify block-level management and sector locking strategies.
• Enhanced data protection: Protection register, flexible sector locking, OTP cells, and an enhanced VPEN protection option reduce the risk of unintended modification.
• Fast effective programming: Write-buffer programming delivers a 5.6 µs-per-byte effective programming time for efficient in-system updates.
• Extended temperature operation: Specified for -40°C to +85°C operation to support designs requiring a wide ambient temperature range.
• High endurance: Rated for 100,000 erase cycles per block to support field updates and long-term use.

Why Choose MT28F640J3BS-115 MET?

The MT28F640J3BS-115 MET combines a parallel NOR FLASH architecture, compact 64-ball FBGA packaging, and a suite of data protection and programming features to deliver dependable non-volatile storage for systems that require 64 Mbit density and predictable read/program behavior. Its 2.7 V–3.6 V supply range, 115 ns read access (64Mb), and extended -40°C to +85°C operating range position it for designs that need stable operation across a range of conditions.

This device is suited to engineers specifying parallel flash for firmware, boot code, and embedded data storage where block-level control, device identification, and programming performance are important design considerations. Built-in protection mechanisms and automatic programming/erase algorithms support maintainability and reliability over the product life cycle.

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