MT28F640J3FS-115 ET TR

The MT28F640J3FS-115 ET TR is a 64 Mbit Q-FLASH non-volatile FLASH memory device with a parallel interface, supplied in a 64-ball FBGA (10×13) package. It supports x8 and x16 memory organizations and provides block-level erase/program control and status features for embedded code and data storage.

Designed for systems requiring asynchronous page-mode reads and block management, the device operates from 2.7 V to 3.6 V, delivers a 115 ns read access time, and is rated for operation from –40°C to +85°C (TA).

Key Features

• Memory Architecture 64 Mbit Q-FLASH organized as 8M × 8 or 4M × 16 with sixty-four 128 KB erase blocks.
• Interface & Command Set Parallel memory interface with industry-standard pinout, supports Common Flash Interface (CFI) and a scalable command set; inputs and outputs are TTL-compatible.
• Performance / Timing Asynchronous page-mode reads with a 115 ns read access time (device timing option –115).
• Program & Erase Automatic write and erase algorithm, write buffer delivering an effective 5.6 μs-per-byte programming time, and support for program/erase suspend operations (block erase suspend-to-read, block erase suspend-to-program, program suspend-to-read).
• Data Protection & Identification 128-bit protection register, 64-bit unique device identifier, 64-bit user-programmable OTP cells, enhanced data protection with VPEN = VSS, and flexible sector locking including lockout during power transition.
• Endurance & Reliability Up to 100,000 erase cycles per block (specified in datasheet).
• Power & Temperature VCC and programming operation from 2.7 V to 3.6 V; operating temperature range –40°C to +85°C (TA).
• Package 64-ball FBGA (10×13) package, 1.00 mm pitch option noted in datasheet packaging options.

Typical Applications

• Firmware and boot code storage Non-volatile, block-erasable storage for system firmware and boot code in designs using parallel flash.
• Embedded code and data storage Parallel FLASH organized for x8 or x16 bus widths in embedded systems requiring block erase and program operations.
• Device identification and secure fields On-device 64-bit unique identifier and 64-bit user-programmable OTP cells for system identification or limited secure storage.
• Suspend-capable memory operations Systems that benefit from block erase or program suspend-to-read/program features to maintain read access during long operations.

Unique Advantages

• Flexible bus-width support Native x8 and x16 organization allows straightforward integration with 8-bit or 16-bit parallel data buses.
• Fast parallel read access 115 ns asynchronous page-mode read access time supports responsive code and data fetch in parallel-memory designs.
• Block-level endurance and management Sixty-four 128 KB erase blocks with up to 100,000 erase cycles per block and automatic erase/program algorithms simplify lifecycle planning.
• Integrated protection and ID 128-bit protection register plus unique device ID and OTP cells provide on-chip options for protection, identification, and one-time programming.
• Robust power and temperature window 2.7 V–3.6 V operation and –40°C to +85°C rating accommodate a broad range of supply and ambient conditions.
• Compact FBGA footprint 64-ball FBGA (10×13) package enables dense board layout while retaining a parallel interface.

Why Choose MT28F640J3FS-115 ET TR?

The MT28F640J3FS-115 ET TR combines a parallel Q-FLASH architecture with block-level control, data protection features, and a compact 64-ball FBGA package. Its 8-bit/16-bit organization, CFI support, and suspend-capable program/erase operations make it suitable for systems that require reliable non-volatile code and data storage with predictable timing and endurance characteristics.

This device is ideal for designers who need a parallel FLASH solution with on-chip protection/ID options, flexible voltage operation (2.7 V–3.6 V), and an extended temperature range (–40°C to +85°C). The combination of documented endurance, programming performance, and block architecture supports long-term integration and field maintainability.

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