MT29E256G08CBHBBJ4-3ES:B
| Part Description |
IC FLASH 256GBIT PAR 132VBGA |
|---|---|
| Quantity | 556 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 132-VBGA (12x18) | Memory Format | FLASH | Technology | FLASH - NAND | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | 333 MHz | Voltage | 2.5V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 132-VBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 32G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | OBSOLETE | HTS Code | N/A |
Overview of MT29E256G08CBHBBJ4-3ES:B – IC FLASH 256GBIT PAR 132VBGA
The MT29E256G08CBHBBJ4-3ES:B is a non-volatile NAND flash memory device offering 256 Gbit of storage in a parallel memory format. It is organized as 32G × 8, supports a 333 MHz clock frequency, and is supplied in a 132-VBGA (12×18) package.
This device is targeted at designs that require high-capacity parallel NAND storage with a 2.5 V to 3.6 V supply range and operates across a commercial temperature range of 0°C to 70°C.
Key Features
- Memory Core (FLASH - NAND)
Non-volatile FLASH NAND technology with a total memory size of 256 Gbit organized as 32G × 8. - Interface
Parallel memory interface with a specified clock frequency of 333 MHz for synchronous operation with parallel bus designs. - Voltage Supply
Operates from 2.5 V to 3.6 V, accommodating common system voltage rails. - Package
Supplied in a 132-VBGA package (12×18) suitable for compact, board-level mounting. - Operating Temperature
Commercial temperature range specified at 0°C to 70°C (TA). - Memory Organization
Configured as 32G × 8 to match parallel data bus architectures.
Typical Applications
- Parallel NAND storage systems
Used where 256 Gbit of non-volatile parallel FLASH is required for bulk data storage. - Embedded systems with parallel memory interfaces
Suitable for designs that integrate parallel FLASH devices and require a 333 MHz clocked memory interface. - Commercial temperature deployments
Intended for applications operating within the 0°C to 70°C ambient range.
Unique Advantages
- High-density capacity: Provides 256 Gbit in a single device, organized as 32G × 8 to support large storage requirements.
- Parallel interface with defined clock rate: 333 MHz clock support enables predictable timing integration with parallel memory buses.
- Flexible power compatibility: 2.5 V to 3.6 V supply range allows use across multiple system voltage domains.
- Compact VBGA package: 132-VBGA (12×18) package supports high-density board designs while maintaining a standard BGA footprint.
- Commercial temperature rating: Specified 0°C to 70°C operating range for typical commercial applications.
Why Choose IC FLASH 256GBIT PAR 132VBGA?
The MT29E256G08CBHBBJ4-3ES:B is positioned as a straightforward, high-capacity parallel NAND flash option for engineers requiring 256 Gbit of non-volatile storage in a 132-VBGA package. Its 32G × 8 organization, 333 MHz clock frequency, and 2.5 V–3.6 V supply range make it suitable for systems designed around parallel FLASH architectures and commercial temperature operation.
Manufactured by Micron Technology Inc., this device is appropriate for designs that prioritize high-density storage in a compact package and need clear, verifiable electrical and mechanical specifications for integration and procurement.
Request a quote or submit an inquiry to obtain pricing and availability information for the MT29E256G08CBHBBJ4-3ES:B.
