MT29E256G08CMCABJ2-10Z:A TR
| Part Description |
IC FLASH 256GBIT PAR 132VBGA |
|---|---|
| Quantity | 399 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 132-VBGA (12x18) | Memory Format | FLASH | Technology | FLASH - NAND | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | 100 MHz | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 132-VBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 32G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29E256G08CMCABJ2-10Z:A TR – IC FLASH 256GBIT PAR 132VBGA
The MT29E256G08CMCABJ2-10Z:A TR is a 256 Gbit non-volatile NAND flash memory device provided in a 132-VBGA (12×18) package. It implements a parallel memory interface and a 32G × 8 organization, delivering high-density storage in a compact BGA footprint.
This device is intended for designs that require parallel NAND flash memory with a defined operating voltage range and temperature window, offering predictable electrical and thermal characteristics for integration into embedded systems and other electronic products.
Key Features
- Memory Type & Technology Non-volatile FLASH NAND memory, supplied as a 256 Gbit device organized as 32G × 8.
- Interface Parallel memory interface for systems designed to communicate with parallel NAND devices.
- Clock Frequency Specified 100 MHz clock frequency for memory timing and interface operation.
- Voltage Supply Operates from 2.7 V to 3.6 V, enabling integration with systems using standard 3.3 V domains.
- Package 132-VBGA package (12×18 mm) providing a compact, surface-mount form factor for high-density board layouts.
- Operating Temperature Rated for 0°C to 70°C (TA), suitable for typical commercial-temperature applications.
Unique Advantages
- High storage density: 256 Gbit capacity in a single device minimizes the number of components required for large storage needs.
- Parallel interface compatibility: Parallel memory interface supports designs that require parallel NAND connectivity and timing.
- Defined clock performance: 100 MHz clock frequency allows predictable timing integration with system controllers.
- Flexible supply range: 2.7 V to 3.6 V operation enables use with common 3.3 V power domains.
- Compact VBGA package: 132-VBGA (12×18) package reduces board area while providing a robust BGA mounting option.
Why Choose IC FLASH 256GBIT PAR 132VBGA?
The MT29E256G08CMCABJ2-10Z:A TR positions itself as a straightforward, high-density parallel NAND flash solution in a compact 132-VBGA package. Its 256 Gbit capacity, 32G × 8 organization and 100 MHz clock make it suitable for designers requiring predictable parallel flash behavior within a 2.7 V–3.6 V supply environment and a 0°C–70°C operating range.
This device is appropriate for projects and customers focused on integrating dense, non-volatile FLASH memory in constrained board space where a parallel interface is required. Its clear electrical and mechanical specifications support reliable long-term integration into commercial-temperature electronic designs.
If you would like pricing, lead-time information or to request a quote for MT29E256G08CMCABJ2-10Z:A TR, please contact sales to submit your request.
