MT29E256G08CMCDBJ5-6:D TR
| Part Description |
IC FLASH 256GBIT PAR 132TBGA |
|---|---|
| Quantity | 1,449 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 132-TBGA (12x18) | Memory Format | FLASH | Technology | FLASH - NAND | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | 167 MHz | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 132-TBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 32G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29E256G08CMCDBJ5-6:D TR – IC FLASH 256GBIT PAR 132TBGA
The MT29E256G08CMCDBJ5-6:D TR is a non-volatile NAND flash memory device offering 256 Gbit capacity in a parallel interface configuration. It features a 32G × 8 memory organization and operates with a 167 MHz clock.
This device targets designs requiring high-density parallel NAND storage in a compact 132-TBGA (12×18) package and operates from a 2.7 V to 3.6 V supply within a 0°C to 70°C ambient range.
Key Features
- Memory Core Non-volatile FLASH - NAND technology providing 256 Gbit of storage.
- Memory Organization Organized as 32G × 8 to present an 8-bit wide data path.
- Interface & Timing Parallel memory interface with a 167 MHz clock frequency for system integration.
- Power Supply voltage range of 2.7 V to 3.6 V to support standard 3.3 V system rails.
- Package 132-TBGA package in a 12×18 footprint for dense board-level integration.
- Operating Temperature Ambient operating range of 0°C to 70°C (TA).
Typical Applications
- Embedded systems Provides parallel NAND non-volatile storage for embedded designs requiring up to 256 Gbit capacity.
- Data logging and memory expansion Suited for systems needing large, board-mounted flash in a compact TBGA package.
- Consumer and industrial electronics Fits designs operating within 0°C to 70°C that use a 2.7 V–3.6 V supply and a parallel memory interface.
Unique Advantages
- High-density storage: 256 Gbit capacity in a single device supports large on-board data requirements.
- Byte-wide organization: 32G × 8 arrangement simplifies integration with 8-bit parallel data buses.
- Standard supply compatibility: Operates across 2.7 V to 3.6 V, accommodating common 3.3 V systems.
- Compact packaging: 132-TBGA (12×18) package enables high-density board layouts.
- Deterministic clocking: 167 MHz clock frequency specified for timing and system planning.
Why Choose IC FLASH 256GBIT PAR 132TBGA?
The MT29E256G08CMCDBJ5-6:D TR combines high-capacity parallel NAND flash with a compact 132-TBGA footprint and a 32G × 8 organization, making it appropriate for designs that require substantial on-board non-volatile storage while maintaining a standard 2.7 V–3.6 V power domain. Its specified 167 MHz clock and parallel interface facilitate integration into systems that use byte-wide memory buses.
Manufactured by Micron Technology Inc., this device is suited for engineers and procurement teams specifying dense flash memory solutions for embedded, consumer, or industrial applications operating within the stated temperature and voltage ranges.
Request a quote or submit an inquiry to obtain pricing and availability for the MT29E256G08CMCDBJ5-6:D TR.
