MT29E256G08CECCBH6-6:C
| Part Description |
IC FLASH 256GBIT PAR 152VBGA |
|---|---|
| Quantity | 894 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 152-VBGA (14x18) | Memory Format | FLASH | Technology | FLASH - NAND | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | 167 MHz | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 152-VBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 32G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29E256G08CECCBH6-6:C – IC FLASH 256GBIT PAR 152VBGA
The MT29E256G08CECCBH6-6:C is a 256 Gbit non-volatile NAND flash memory device organized as 32G × 8. It implements parallel flash architecture and is supplied in a 152-VBGA (14 × 18 mm) package.
With a 167 MHz clock frequency and a 2.7 V to 3.6 V supply range, this device supports designs that require high-density parallel NAND storage in a compact VBGA footprint and operate across a commercial temperature range of 0°C to 70°C.
Key Features
- Memory Type & Technology Non-volatile FLASH NAND memory with a total capacity of 256 Gbit organized as 32G × 8.
- Interface & Clock Parallel memory interface with a specified clock frequency of 167 MHz for device timing.
- Voltage Supply Operates from 2.7 V to 3.6 V to accommodate 3.0 V system rails.
- Package 152-VBGA package case (14 × 18 mm) for high-density board integration.
- Operating Temperature Specified ambient operating range of 0°C to 70°C (TA).
- Memory Organization & Format 32G × 8 organization; memory format: FLASH.
Typical Applications
- Embedded storage modules — Provides 256 Gbit of parallel NAND FLASH for board-level storage implementations.
- Consumer electronics — Compact 152-VBGA package and commercial temperature range suit consumer devices that use parallel flash memory.
- Industrial controllers — Use where non-volatile, high-density parallel memory and a 2.7 V–3.6 V supply range are required.
Unique Advantages
- High-density capacity: 256 Gbit total memory enables substantial non-volatile storage in a single device.
- Parallel interface: 32G × 8 organization with a parallel memory interface simplifies integration into parallel-memory systems.
- Compact VBGA footprint: 152-VBGA (14 × 18 mm) package reduces board area for space-constrained designs.
- Flexible supply voltage: 2.7 V to 3.6 V operation supports common 3 V system rails.
- Commercial temperature support: Rated for 0°C to 70°C (TA) to match many consumer and light-industrial environments.
Why Choose MT29E256G08CECCBH6-6:C?
The MT29E256G08CECCBH6-6:C delivers a high-capacity parallel NAND flash solution in a compact 152-VBGA package, with a defined clock frequency and a supply voltage range suitable for 3 V systems. Its 32G × 8 organization provides a straightforward interface option for designs that require dense non-volatile storage.
This device is appropriate for designers and procurement teams targeting compact, board-level flash memory for commercial-temperature applications where a parallel interface and a 2.7 V–3.6 V supply are needed.
Request a quote or submit an inquiry for MT29E256G08CECCBH6-6:C to receive pricing and availability information and to discuss technical requirements.
