MT29E256G08CMCABJ2-10Z:A

The MT29E256G08CMCABJ2-10Z:A is a 256 Gbit non-volatile NAND flash memory device in a parallel interface format. It provides high-density storage in a compact 132-TBGA (12×18) package for systems that require parallel flash memory with a 32G × 8 organization.

With a 100 MHz clock frequency and a supply voltage range of 2.7 V to 3.6 V, this device targets applications that need dense, parallel-access flash memory within a commercial operating temperature range of 0°C to 70°C.

Key Features

• Memory Type & Technology  Non-volatile FLASH - NAND memory providing 256 Gbit of storage in a parallel flash format.
• Memory Organization  Configured as 32G × 8 to support byte-wide parallel access patterns.
• Interface & Performance  Parallel memory interface with a specified clock frequency of 100 MHz for synchronous operation.
• Supply Voltage  Operates across a 2.7 V to 3.6 V supply range to match common system power rails.
• Package  Delivered in a 132-TBGA package (12 × 18 mm footprint) for compact board-level integration.
• Operating Temperature  Rated for commercial operation from 0°C to 70°C (TA).

Typical Applications

• Embedded Storage Systems  Provides high-density non-volatile storage for systems requiring parallel NAND memory in a compact BGA footprint.
• Consumer Electronics  Suitable for consumer devices that operate within a 0°C to 70°C temperature range and require large-capacity flash memory.
• Commercial and Industrial Equipment  Can be used in commercial equipment designs that utilize a 2.7 V–3.6 V supply and parallel flash interfaces for local storage.

Unique Advantages

• High-density 256 Gbit capacity:  Delivers substantial non-volatile storage in a single device, reducing the number of components required for large datasets.
• Parallel 32G × 8 organization:  Byte-wide parallel access simplifies interfacing to parallel memory controllers and legacy systems.
• Compact 132-TBGA package:  Small 12×18 mm TBGA package helps conserve PCB area while retaining high storage density.
• Wide supply range:  Operates from 2.7 V to 3.6 V to accommodate common system power rails and reduce the need for additional power conversion.
• Commercial temperature rating:  Specified operation from 0°C to 70°C for use in typical commercial environments.

Why Choose IC FLASH 256GBIT PAR 132TBGA?

The MT29E256G08CMCABJ2-10Z:A positions itself as a high-density parallel NAND flash option that balances storage capacity, a compact TBGA package, and standard supply/clocking requirements. Its 32G × 8 organization and 100 MHz clock frequency make it appropriate for designs that require parallel-access flash memory within a commercial temperature range.

Manufactured by Micron Technology Inc., this device suits designers and procurement teams seeking a straightforward, high-capacity parallel flash component for embedded, consumer, and commercial applications where the specified electrical and environmental limits match system requirements.

Request a quote or contact sales to discuss pricing, availability, and volume options for the MT29E256G08CMCABJ2-10Z:A.