MT29E512G08CEHBBJ4-3:B TR

The MT29E512G08CEHBBJ4-3:B TR is a 512 Gbit non-volatile NAND flash memory device manufactured by Micron Technology Inc. It is organized as 64G × 8 and provides a parallel memory interface for system-level storage integration.

Designed for applications requiring parallel NAND flash, the device operates from a 2.5 V to 3.6 V supply and supports a clock frequency of 333 MHz. It is offered in a 132‑VBGA (12×18) package and specified for an ambient operating temperature range of 0 °C to 70 °C.

Key Features

• Memory Type and Capacity 512 Gbit non-volatile NAND flash organized as 64G × 8, providing high-density storage in a single device.
• Interface and Performance Parallel memory interface with a specified clock frequency of 333 MHz for synchronous operation in parallel systems.
• Power Wide supply voltage range of 2.5 V to 3.6 V to support various system power domains.
• Package 132‑VBGA (12×18) supplier device package for compact board-level integration.
• Operating Temperature Specified ambient temperature range of 0 °C to 70 °C for standard commercial environments.

Typical Applications

• Parallel NAND Storage Systems Used where a parallel flash interface and high-capacity non-volatile storage are required.
• Embedded Storage Modules Integrated into embedded platforms that require 512 Gbit flash memory with a 132‑VBGA footprint.
• Board-Level Memory Expansion Employed for increasing system storage density while maintaining a defined supply voltage range (2.5 V–3.6 V).

Unique Advantages

• High Density in a Single Device: 512 Gbit capacity (64G × 8) reduces the number of components required for large storage needs.
• Parallel Interface: Parallel memory interface supports integration with systems designed for parallel NAND access.
• Defined Performance Clock: 333 MHz clock frequency provides a clear timing specification for system design and validation.
• Broad Supply Voltage Compatibility: Operation across 2.5 V to 3.6 V simplifies use across platforms with different supply rails.
• Compact VBGA Package: 132‑VBGA (12×18) package allows for high-density board placement and standardized assembly.
• Commercial Temperature Range: Rated for 0 °C to 70 °C ambient operation for typical commercial applications.

Why Choose IC FLASH 512GBIT PAR 132VBGA?

The MT29E512G08CEHBBJ4-3:B TR positions itself as a high-capacity, parallel-interface NAND flash option with explicit electrical and mechanical specifications—512 Gbit organization, 333 MHz clock frequency, 2.5 V–3.6 V supply, and a 132‑VBGA (12×18) package. These defined parameters make it suitable for designs that require clear integration targets for board layout, power budgeting, and timing.

This device is appropriate for engineers and procurement teams seeking a Micron-manufactured NAND flash component with a known capacity and package form factor, and for system designs operating within the specified commercial temperature and voltage ranges.

To request pricing, availability or to submit a quote inquiry for MT29E512G08CEHBBJ4-3:B TR, please request a quote or submit an inquiry with your quantity and delivery requirements.