MT29E512G08CMCCBH7-6:C

The MT29E512G08CMCCBH7-6:C is a 512 Gbit non-volatile NAND flash memory device organized as 64G × 8 with a parallel memory interface. It implements NAND flash technology and is supplied in a 152‑TBGA package.

Key electrical and environmental characteristics include a clock frequency of 167 MHz, a supply voltage range of 2.7 V to 3.6 V, and an operating ambient temperature range of 0°C to 70°C, enabling integration into systems that require high-density parallel flash storage within those operating conditions.

Key Features

• Memory Type Non-volatile NAND flash memory providing persistent data storage without power.
• Memory Organization & Size Organized as 64G × 8 for a total capacity of 512 Gbit, enabling high-density storage in a single device.
• Interface & Performance Parallel memory interface with a specified clock frequency of 167 MHz for synchronous operation.
• Power Supply Operates from a supply voltage range of 2.7 V to 3.6 V to match common system power rails.
• Temperature Range Rated for ambient operation from 0°C to 70°C (TA), suitable for standard commercial-temperature applications.
• Package Supplied in a 152‑TBGA package for high-density board-level integration.

Unique Advantages

• High storage density: 512 Gbit capacity in a single 152‑TBGA device reduces the need for multiple memory components.
• Parallel interface: 64G × 8 organization with a 167 MHz clock supports parallel data access patterns.
• Flexible power range: 2.7 V to 3.6 V supply compatibility simplifies integration with common system voltages.
• Commercial-temperature rating: 0°C to 70°C operation aligns with standard commercial deployment environments.
• Compact package: 152‑TBGA packaging enables dense board layouts where space is constrained.

Why Choose MT29E512G08CMCCBH7-6:C?

The MT29E512G08CMCCBH7-6:C positions itself as a high-density parallel NAND flash option that combines a 512 Gbit capacity with a 64G × 8 organization and a 167 MHz clock specification. Its supply voltage range of 2.7 V to 3.6 V and 152‑TBGA package make it a practical choice for designs that require compact, high-capacity non-volatile storage within commercial temperature limits.

This device is suitable for engineers and procurement teams specifying parallel NAND flash where explicit capacity, interface type, package, temperature, and voltage requirements must be met and verified against system constraints.

Request a quote or submit a pricing inquiry to receive availability and lead-time information for the MT29E512G08CMCCBH7-6:C.