MT29F256G08AKCBBH7-6IT:B

The MT29F256G08AKCBBH7-6IT:B is a 256 Gbit non-volatile NAND flash memory device implemented in SLC (Single-Level Cell) FLASH technology. It is organized as 32G × 8 with a parallel memory interface and operates from a 2.7 V to 3.6 V supply.

The device is supplied in a 152‑TBGA (14×18) package and supports a clock frequency of 167 MHz with an operating ambient temperature range of −40°C to 85°C, making it suitable for systems requiring high-density parallel flash storage.

Key Features

• Memory Technology SLC NAND FLASH non-volatile memory, providing single-level cell storage architecture as specified.
• Density & Organization 256 Gbit capacity arranged as 32G × 8 to support large on-board storage requirements.
• Interface & Performance Parallel memory interface with a specified clock frequency of 167 MHz for timing integration in parallel bus designs.
• Power Wide voltage supply range of 2.7 V to 3.6 V to accommodate common system power rails.
• Package 152‑TBGA package (14×18) for compact board mounting and high I/O density.
• Operating Temperature Rated for an ambient temperature range of −40°C to 85°C (TA) for use across extended temperature environments.

Typical Applications

• Embedded storage systems Use as on-board non-volatile storage where parallel SLC NAND is required for data retention and capacity.
• Industrial equipment Integration into control and automation hardware that requires a 2.7 V–3.6 V supply and operation across −40°C to 85°C.
• Consumer and professional electronics Local mass storage in designs that can accommodate a 152‑TBGA package and parallel flash interface.

Unique Advantages

• High storage density: 256 Gbit capacity enables substantial on-board data storage without external devices.
• SLC FLASH technology: Single-Level Cell NAND provides the specific FLASH architecture specified for predictable storage organization.
• Parallel interface with 167 MHz clock: Facilitates integration into parallel bus architectures with defined timing.
• Wide supply voltage: 2.7 V to 3.6 V operation aligns with common system power rails.
• Extended temperature range: −40°C to 85°C operation supports designs that must function across a broad ambient temperature window.
• Compact TBGA package: 152‑TBGA (14×18) delivers a compact footprint for high-density board layouts.

Why Choose MT29F256G08AKCBBH7-6IT:B?

The MT29F256G08AKCBBH7-6IT:B provides a high-density, SLC-based NAND FLASH solution in a compact 152‑TBGA package, combining a 256 Gbit capacity with a parallel interface and a 167 MHz clock specification. Its 2.7 V–3.6 V supply range and −40°C to 85°C operating window make it suitable for designs that require reliable non-volatile storage across varied power and temperature conditions.

This device is appropriate for engineers and procurement teams specifying on-board parallel flash memory for embedded, industrial, or electronics designs that require the documented capacity, interface type, package, and environmental range.

Request a quote or contact sales for availability, pricing, and lead-time information for the MT29F256G08AKCBBH7-6IT:B.