MT29E512G08CMCBBH7-6:B TR
| Part Description |
IC FLASH 512GBIT PARALLEL 167MHZ |
|---|---|
| Quantity | 1,033 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | N/A | Memory Format | FLASH | Technology | FLASH - NAND | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | 167 MHz | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | N/A | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 64G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | OBSOLETE | HTS Code | N/A |
Overview of MT29E512G08CMCBBH7-6:B TR – IC FLASH 512GBIT PARALLEL 167MHZ
The MT29E512G08CMCBBH7-6:B TR from Micron Technology Inc. is a 512 Gbit non-volatile NAND flash memory device organized as 64G × 8 with a parallel memory interface. It provides a 167 MHz clock frequency and operates from a 2.7 V to 3.6 V supply.
This device is intended for designs that require high-density non-volatile storage within the specified commercial temperature range of 0°C to 70°C, offering straightforward integration where a parallel flash interface and defined electrical ranges are required.
Key Features
- Memory Type and Technology Non-volatile NAND flash memory suitable for persistent data storage.
- Density and Organization 512 Gbit capacity organized as 64G × 8 to deliver high-density storage in a single device.
- Interface and Timing Parallel memory interface with a 167 MHz clock frequency for synchronous operation with host controllers that support parallel flash.
- Voltage Supply Wide supply voltage range from 2.7 V to 3.6 V to support typical 3 V system rails.
- Operating Temperature Commercial operating range of 0°C to 70°C for standard-environment applications.
Typical Applications
- Storage Subsystems — Provides high-density non-volatile storage for systems that require large-capacity flash in a parallel memory format.
- Embedded Systems — Used where on-board persistent storage is required and integration with parallel memory controllers is preferred.
- Consumer Electronics — Suitable for consumer devices that need large NAND flash capacity within the commercial temperature and voltage ranges provided.
Unique Advantages
- High Capacity — 512 Gbit density supports applications that need substantial non-volatile storage in a single device.
- Parallel Interface — Parallel memory interface with a defined 167 MHz clock provides deterministic timing for compatible host designs.
- Flexible Power Range — Operates across 2.7 V to 3.6 V, allowing compatibility with common 3 V system power rails.
- Commercial Temperature Support — Specified for 0°C to 70°C operation to match standard commercial-environment deployments.
- Established Manufacturer — Supplied by Micron Technology Inc., a known provider of memory components.
Why Choose IC FLASH 512GBIT PARALLEL 167MHZ?
The MT29E512G08CMCBBH7-6:B TR is positioned for designs that prioritize high-density NAND flash storage with a parallel interface and defined electrical and thermal ranges. Its 512 Gbit capacity, 64G × 8 organization, and 167 MHz clock make it suitable for systems requiring substantial non-volatile memory in a parallel format.
Choose this device when your design requires a Micron-sourced NAND flash offering clear supply voltage and operating temperature specifications to support predictable integration and long-term deployment in commercial environments.
Request a quote or submit an inquiry for pricing and availability to evaluate the MT29E512G08CMCBBH7-6:B TR for your design requirements.
