MT29E512G08CEHBBJ4-3:B
| Part Description |
IC FLASH 512GBIT PAR 132VBGA |
|---|---|
| Quantity | 1,998 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 132-VBGA (12x18) | Memory Format | FLASH | Technology | FLASH - NAND | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | 333 MHz | Voltage | 2.5V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 132-VBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 64G x 8 | ||
| Moisture Sensitivity Level | N/A | RoHS Compliance | Unknown | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29E512G08CEHBBJ4-3:B – IC FLASH 512GBIT PAR 132VBGA
The MT29E512G08CEHBBJ4-3:B is a 512 Gbit non-volatile FLASH memory device using NAND technology in a parallel interface format. It is organized as 64G × 8 and supports a clock frequency of 333 MHz.
Designed for systems that require high-density parallel NAND storage, the device offers a compact 132‑VBGA (12×18) package and operates over a supply range of 2.5 V to 3.6 V with an ambient operating temperature of 0°C to 70°C.
Key Features
- Memory Core Non-volatile FLASH memory using NAND technology with a total capacity of 512 Gbit organized as 64G × 8.
- Interface and Performance Parallel memory interface with a specified clock frequency of 333 MHz for synchronous operation.
- Power Operates from a supply voltage range of 2.5 V to 3.6 V to accommodate a range of system power rails.
- Package Supplied in a 132‑VBGA package (12×18) suitable for dense board integration.
- Environmental Ambient operating temperature range specified as 0°C to 70°C (TA).
Typical Applications
- High‑density embedded storage Use where 512 Gbit of non‑volatile NAND FLASH capacity is required in a compact package.
- Parallel memory systems Suitable for designs that utilize a parallel FLASH interface and synchronous clocking at up to 333 MHz.
- Space‑constrained board designs The 132‑VBGA (12×18) package supports high-density PCB layouts.
Unique Advantages
- 512 Gbit capacity: Provides large non-volatile storage in a single device to reduce component count.
- Parallel interface at 333 MHz: Supports synchronous parallel operation for systems designed around parallel FLASH access.
- Wide supply range (2.5 V–3.6 V): Compatible with multiple supply schemes to simplify power rail design.
- Compact 132‑VBGA package: Enables dense board integration while retaining high memory capacity (12×18 footprint).
- Specified operating temperature: Rated for 0°C to 70°C (TA), allowing deployment in standard commercial environments.
Why Choose MT29E512G08CEHBBJ4-3:B?
The MT29E512G08CEHBBJ4-3:B combines high-density 512 Gbit NAND FLASH storage with a parallel interface and a 333 MHz clock specification, offering a focused solution for designs that require large non-volatile memory in a compact 132‑VBGA package. Its 2.5 V to 3.6 V supply range and defined commercial operating temperature make it suitable for a variety of standard embedded storage applications.
This device is appropriate for customers and designs prioritizing high capacity per component, parallel memory access, and a small board footprint, delivering predictable integration based on the provided electrical, mechanical, and environmental specifications.
Request a quote or submit an inquiry to receive pricing and availability information for the MT29E512G08CEHBBJ4-3:B.
