MT29E512G08CKCCBH7-6:C

The MT29E512G08CKCCBH7-6:C is a 512 Gbit non-volatile FLASH memory device based on NAND technology. It provides a parallel memory interface in a compact 152‑TBGA (14×18) package with defined clock, voltage and temperature specifications for system integration.

This device is intended for systems that require high-density parallel FLASH storage and precise electrical and thermal parameters, including a 167 MHz clock frequency and a 2.7 V to 3.6 V supply range.

Key Features

• Memory Core Non-volatile FLASH (NAND) technology organized as 64G × 8 to provide a total of 512 Gbit of storage.
• Interface Parallel memory interface for integration with parallel memory controllers and board-level designs that accept parallel FLASH devices.
• Clock Frequency Specified 167 MHz clock frequency to match system timing requirements where a fixed device clock is required.
• Voltage Supply Operates from 2.7 V to 3.6 V, aligning with common system power rails for FLASH devices.
• Package 152‑TBGA package (14×18) providing a compact footprint for a high-density memory device.
• Operating Temperature Rated for 0°C to 70°C (TA), suitable for standard commercial temperature environments.

Typical Applications

• Parallel NAND storage — Use as a 512 Gbit non-volatile storage device in systems requiring a parallel FLASH interface.
• Compact, high-density modules — Integrate where a 152‑TBGA package and 64G × 8 organization are required to consolidate storage on board.
• Voltage-matched designs — Employ in systems operating on 2.7 V to 3.6 V supply rails to simplify power domain design.

Unique Advantages

• High-density 512 Gbit capacity: Enables consolidation of large storage requirements into a single device footprint.
• Parallel interface: Supports direct integration with parallel memory architectures and controller designs.
• Defined clock performance: 167 MHz clock frequency provides a clear timing reference for system design and verification.
• Compact TBGA packaging: 152‑TBGA (14×18) balances package density with high-capacity memory integration.
• Broad supply voltage range: 2.7 V to 3.6 V operation aligns with common system power rails for FLASH devices.
• Commercial temperature rating: Rated 0°C to 70°C for standard commercial applications.

Why Choose IC FLASH 512GBIT PAR 152TBGA?

The MT29E512G08CKCCBH7-6:C provides a straightforward implementation of 512 Gbit NAND FLASH in a parallel-interface form factor and a 152‑TBGA package, manufactured by Micron Technology Inc. Its documented clock frequency, voltage range, and operating temperature allow designers to evaluate fit against specific system requirements without ambiguity.

This device is well suited for designs that require high-density parallel FLASH storage in a compact package and for engineering teams that need precise, verifiable electrical and thermal specifications from a known memory vendor.

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