MT29F256G08AKCBBH7-6:B TR

The MT29F256G08AKCBBH7-6:B TR is a 256 Gbit non-volatile Flash memory device using NAND (SLC) technology configured as 32G × 8. It provides parallel-memory organization and operates from a 2.7 V to 3.6 V supply with a specified clock frequency of 167 MHz.

This device is intended for systems that require parallel SLC NAND flash memory in a compact 152-TBGA (14 × 18) package and that operate within the published ambient temperature range of 0°C to 70°C.

Key Features

• Memory Type and Technology Non-volatile Flash memory using NAND SLC technology, providing single-level cell storage in a 256 Gbit capacity.
• Memory Organization Organized as 32G × 8, suitable for parallel data access patterns and board-level integration.
• Interface and Timing Parallel memory interface with a specified clock frequency of 167 MHz for device timing reference.
• Power Operates from a 2.7 V to 3.6 V supply range, compatible with common 3.3 V systems.
• Package Supplier device package: 152-TBGA (14 × 18), offering a compact board footprint for high-density memory integration.
• Environmental / Operating Range Rated for ambient operation from 0°C to 70°C (TA).

Typical Applications

• Embedded systems — Use as board-level non-volatile storage where parallel SLC NAND memory and a compact TBGA package are required.
• Storage controllers — Suitable for designs that require a 256 Gbit parallel NAND memory organized as 32G × 8.
• Industrial equipment (ambient operation) — For equipment operating within the 0°C to 70°C ambient range and using a 2.7 V–3.6 V supply.

Unique Advantages

• High-density 256 Gbit capacity: Enables substantial non-volatile storage on a single device using SLC NAND architecture.
• Parallel memory organization: 32G × 8 configuration supports parallel access patterns and straightforward interface mapping.
• SLC NAND technology: Single-level cell design consistent with the specified NAND technology in the product data.
• Flexible supply range: 2.7 V to 3.6 V operation simplifies integration with common 3.3 V systems.
• Compact TBGA package: 152-TBGA (14 × 18) package reduces board area for high-density designs.
• Defined operating temperature: 0°C to 70°C ambient rating for deployments within that thermal envelope.

Why Choose IC FLASH 256GBIT PAR 152TBGA?

The MT29F256G08AKCBBH7-6:B TR positions itself as a high-capacity parallel SLC NAND flash device designed for engineers needing 256 Gbit non-volatile storage in a compact TBGA package. Its electrical and mechanical specifications—32G × 8 organization, 167 MHz clock reference, and 2.7 V–3.6 V supply range—make it suitable for board-level integration where parallel flash memory is required.

Backed by Micron Technology Inc., the device is appropriate for designs and teams focused on reliable, high-density SLC NAND memory within the published ambient and supply limits. It supports solutions that require deterministic package dimensions (152-TBGA, 14 × 18) and clearly defined operating parameters.

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