MT29F256G08AMCBBH7-6:B TR

IC FLASH 256GBIT PAR 152TBGA
Part Description

IC FLASH 256GBIT PAR 152TBGA

Quantity 692 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package152-TBGA (14x18)Memory FormatFLASHTechnologyFLASH - NAND (SLC)
Memory Size256 GbitAccess TimeN/AGradeCommercial
Clock Frequency167 MHzVoltage2.7V ~ 3.6VMemory TypeNon-Volatile
Operating Temperature0°C ~ 70°C (TA)Write Cycle Time Word PageN/APackaging152-TBGA
Mounting MethodNon-VolatileMemory InterfaceParallelMemory Organization32G x 8
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unknown
QualificationN/AECCNOBSOLETEHTS CodeN/A

Overview of MT29F256G08AMCBBH7-6:B TR – IC FLASH 256GBIT PAR 152TBGA

The MT29F256G08AMCBBH7-6:B TR is a 256 Gbit non-volatile NAND flash memory device using SLC technology with a parallel memory interface. It offers a 32G × 8 organization, a 167 MHz clock frequency, and operates from a 2.7 V to 3.6 V supply.

This device is provided in a 152-TBGA (14 × 18 mm) package and is specified for operation in the 0°C to 70°C ambient range, supporting designs that require compact, high-density parallel flash memory.

Key Features

  • Memory Type and Technology Non-volatile NAND flash using SLC technology, delivering 256 Gbit of storage in a 32G × 8 organization.
  • Interface Parallel memory interface for straightforward integration with parallel-memory controllers and legacy systems.
  • Performance Clock frequency specified at 167 MHz to match system timing requirements for parallel flash access.
  • Power Operates from a nominal supply range of 2.7 V to 3.6 V to accommodate common 3 V system rails.
  • Package Supplied in a 152-TBGA package (14 × 18 mm) for high-density PCB placement and compact system footprints.
  • Operating Range Ambient operating temperature specified from 0°C to 70°C (TA), suitable for standard commercial-temperature applications.

Typical Applications

  • Embedded Storage Use where a 256 Gbit parallel NAND SLC device provides non-volatile storage for system firmware or large datasets.
  • Consumer Electronics Integrates into consumer devices that require high-density parallel flash in a compact 152‑TBGA package.
  • Industrial and Control Systems Suitable for equipment with commercial-temperature requirements that need reliable non-volatile memory and a 3 V supply range.

Unique Advantages

  • High-density storage: 256 Gbit capacity in a single-device solution reduces board-level component count for large-footprint data storage.
  • SLC NAND technology: Provides the specific NAND flash technology specified for use where SLC characteristics are required.
  • Parallel interface compatibility: Parallel memory interface simplifies integration with existing parallel-memory controllers and legacy system designs.
  • Compact TBGA packaging: 152-TBGA (14 × 18 mm) layout enables dense PCB placement while maintaining a standardized package footprint.
  • <strong-Wide supply range: 2.7 V to 3.6 V operation matches common 3 V system rails for flexible power integration.

Why Choose IC FLASH 256GBIT PAR 152TBGA?

The MT29F256G08AMCBBH7-6:B TR positions itself as a high-density, SLC NAND flash option for designs that require a parallel interface, a compact TBGA footprint, and operation from common 3 V supply rails. Its 32G × 8 organization and 167 MHz clocking make it suitable for systems that need determinable timing on parallel flash access.

This device is appropriate for developers and procurement teams targeting commercial-temperature embedded and consumer applications where non-volatile storage density, package compactness, and standard voltage compatibility are primary selection criteria.

If you would like pricing, lead-time, or a formal quote for the MT29F256G08AMCBBH7-6:B TR, please submit a request or contact sales for assistance.

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