MT29F256G08AMEBBH7-12:B

The MT29F256G08AMEBBH7-12:B is a 256 Gbit non-volatile NAND flash memory device implemented as 32G × 8 organization and provided in a 152‑TBGA (14×18) package. The device uses FLASH - NAND (SLC) technology and presents a parallel memory interface with a specified clock frequency of 83 MHz.

This component targets designs that require high-density parallel flash memory with defined supply and thermal ranges: 2.5 V to 3.6 V operation and an ambient temperature range of 0 °C to 70 °C.

Key Features

• Memory Core  256 Gbit capacity implemented as 32G × 8 organization, providing large non-volatile storage in a single device.
• Technology  FLASH - NAND (SLC) technology is specified for the device.
• Interface & Performance  Parallel memory interface with a clock frequency of 83 MHz for synchronous parallel operation.
• Power  Wide voltage supply range from 2.5 V to 3.6 V to support various system power rails.
• Temperature  Operating ambient temperature range specified as 0 °C to 70 °C (TA).
• Package  152‑TBGA package (14 × 18 mm) for compact board-level integration; supplier device package listed as 152‑TBGA (14x18).

Typical Applications

• Embedded Systems  Provides large non-volatile parallel storage for embedded platforms that require block storage in a single-package device.
• Firmware and Boot Storage  Suitable for storing firmware, boot code, and system images where SLC NAND flash is specified.
• High‑Density Parallel Flash Arrays  Can be used as a high-capacity element in parallel flash memory arrays for projects requiring 256 Gbit devices.

Unique Advantages

• High Capacity in a Single Device:  256 Gbit density (32G × 8) reduces the need for multiple components to achieve large non-volatile storage.
• Parallel Interface with Defined Clock Rate:  Parallel memory interface with an 83 MHz clock frequency enables predictable timing integration for parallel designs.
• SLC NAND Technology:  Device specification lists FLASH - NAND (SLC) technology, aligning with designs that specify single-level cell architectures.
• Flexible Power Range:  2.5 V to 3.6 V supply range accommodates a variety of system power configurations.
• Compact BGA Package:  152‑TBGA (14×18) package offers a compact, board-ready form factor for space-constrained designs.
• Manufacturer:  Supplied by Micron Technology Inc., with part number MT29F256G08AMEBBH7-12:B as the device identifier.

Why Choose MT29F256G08AMEBBH7-12:B?

The MT29F256G08AMEBBH7-12:B combines a 256 Gbit SLC NAND flash implementation with a parallel interface and defined operational parameters (83 MHz clock, 2.5–3.6 V supply, 0 °C–70 °C ambient). This makes it suitable for designs that require a single-device, high-density non-volatile memory solution in a compact 152‑TBGA package.

Designers and procurement teams seeking a high-capacity parallel flash device from an established semiconductor manufacturer can consider this part for systems where the listed electrical, thermal, and package specifications match project requirements.

Request a quote or submit an inquiry for pricing and availability of the MT29F256G08AMEBBH7-12:B to evaluate fit for your design and supply needs.