MT29F256G08AMEBBH7-12:B TR

IC FLASH 256GBIT PAR 152TBGA
Part Description

IC FLASH 256GBIT PAR 152TBGA

Quantity 134 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package152-TBGA (14x18)Memory FormatFLASHTechnologyFLASH - NAND (SLC)
Memory Size256 GbitAccess TimeN/AGradeCommercial
Clock Frequency83 MHzVoltage2.5V ~ 3.6VMemory TypeNon-Volatile
Operating Temperature0°C ~ 70°C (TA)Write Cycle Time Word PageN/APackaging152-TBGA
Mounting MethodNon-VolatileMemory InterfaceParallelMemory Organization32G x 8
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCN3A991B1AHTS Code8542.32.0071

Overview of MT29F256G08AMEBBH7-12:B TR – IC FLASH 256GBIT PAR 152TBGA

The MT29F256G08AMEBBH7-12:B TR is a 256 Gbit non-volatile flash memory device implemented with NAND SLC technology. It is organized as 32G × 8 and provides a parallel memory interface with a specified clock frequency of 83 MHz.

This device is intended for systems that require parallel NAND flash storage delivered in a 152-TBGA (14×18) package, supporting supply voltages from 2.5 V to 3.6 V and an operating ambient temperature range of 0°C to 70°C.

Key Features

  • Memory Core  SLC NAND technology providing non-volatile storage with a memory size of 256 Gbit organized as 32G × 8.
  • Interface & Performance  Parallel memory interface with a clock frequency specified at 83 MHz for synchronous access timing.
  • Voltage Range  Operates across a supply voltage range of 2.5 V to 3.6 V to accommodate varying system power domains.
  • Package  Supplied in a 152-TBGA package (14×18) for compact board-level integration.
  • Operating Conditions  Rated for an ambient temperature range of 0°C to 70°C (TA).
  • Memory Format & Mounting  Flash memory in a parallel format suitable for board-mounted applications requiring non-volatile storage.

Typical Applications

  • Embedded storage systems  Provides parallel non-volatile NAND flash capacity for embedded code and data storage in board-mounted designs.
  • Firmware and code storage  Used where a 256 Gbit parallel flash array is needed to store firmware images and boot code.
  • Industrial and commercial electronics  Suitable for applications operating within the 0°C to 70°C ambient range that require a compact TBGA package and wide supply voltage tolerance.

Unique Advantages

  • High storage density: 256 Gbit capacity enables large code and data storage in a single device.
  • SLC NAND technology: Provides the NAND flash architecture stated in the product specification.
  • Parallel interface: Parallel memory interface and 83 MHz clock frequency support integration into systems designed for parallel flash access.
  • Flexible supply range: 2.5 V to 3.6 V operation accommodates multiple system power rails.
  • Compact TBGA package: 152-TBGA (14×18) package supports dense PCB layouts and board-mounted integration.
  • Commercial temperature rating: Specified for 0°C to 70°C ambient operation for typical commercial deployments.

Why Choose IC FLASH 256GBIT PAR 152TBGA?

The MT29F256G08AMEBBH7-12:B TR positions itself as a high-density parallel SLC NAND flash memory option, combining 256 Gbit capacity with a 32G × 8 organization and an 83 MHz clock. Its 152-TBGA package and wide supply voltage range make it suitable for designs that require compact, board-mounted non-volatile storage within a standard commercial temperature window.

This device is well suited to designers and procurement teams specifying parallel flash for firmware storage, embedded data retention, or other applications where the listed electrical, mechanical, and environmental parameters align with system requirements.

Request a quote or contact sales for pricing, lead times, and availability for the MT29F256G08AMEBBH7-12:B TR.

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