MT29E256G08CECCBH6-6:C TR
| Part Description |
IC FLASH 256GBIT PAR 152VBGA |
|---|---|
| Quantity | 368 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 152-VBGA (14x18) | Memory Format | FLASH | Technology | FLASH - NAND | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | 167 MHz | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 152-VBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 32G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29E256G08CECCBH6-6:C TR – 256Gbit Parallel NAND Flash (152-VBGA)
The MT29E256G08CECCBH6-6:C TR is a 256 Gbit non-volatile NAND flash memory device in a 152-VBGA (14×18) package. It implements parallel NAND flash architecture with a 32G × 8 memory organization and a 167 MHz clock frequency.
This device targets designs that require high-density, parallel-access flash storage with a supply voltage range of 2.7 V to 3.6 V and a commercial operating temperature range of 0 °C to 70 °C.
Key Features
- Memory Type Non-volatile NAND flash providing 256 Gbit of storage in a FLASH memory format.
- Memory Organization 32G × 8 organization for byte-wide parallel access to memory arrays.
- Interface & Clock Parallel memory interface with a clock frequency of 167 MHz for synchronous operation.
- Voltage Wide supply voltage compatibility from 2.7 V to 3.6 V to support common system power rails.
- Package 152-VBGA (14×18) supplier device package for board-level mounting and density optimization.
- Operating Temperature Commercial temperature range: 0 °C to 70 °C (TA).
Unique Advantages
- High storage density: 256 Gbit capacity supports large-volume data storage needs without external stacking.
- Byte-wide organization: 32G × 8 arrangement enables straightforward parallel data access and integration with parallel memory controllers.
- Synchronous clocked operation: 167 MHz clock frequency provides defined timing for deterministic interface behavior.
- Flexible power compatibility: 2.7 V–3.6 V supply range fits common system power domains and reduces power rail complexity.
- Compact VBGA package: 152-VBGA (14×18) offers a space-efficient footprint for high-density board layouts.
Why Choose IC FLASH 256GBIT PAR 152VBGA?
The IC FLASH 256GBIT PAR 152VBGA (MT29E256G08CECCBH6-6:C TR) is positioned for designs that require substantial non-volatile storage in a parallel NAND flash form factor. Its 256 Gbit capacity, 32G × 8 organization, and 167 MHz clock make it suitable for systems that need deterministic parallel access within a 2.7 V–3.6 V power envelope.
Engineers specifying this device benefit from a compact 152-VBGA package and a commercial operating temperature range of 0 °C to 70 °C, enabling integration into a variety of embedded and storage-oriented applications where verified device-level flash capacity and parallel interface behavior are important.
Request a quote or submit an inquiry for pricing and availability of MT29E256G08CECCBH6-6:C TR. Our team can provide lead-time and volume information to support your design and procurement planning.
