MT28F640J3BS-115 ET

The MT28F640J3BS-115 ET is a 64 Mbit non-volatile FLASH memory device in a 64-ball FBGA package. It implements parallel NOR FLASH architecture with memory organizations of 8M × 8 or 4M × 16 and provides asynchronous page mode reads with a 115 ns access time.

This device targets systems that require persistent code or data storage with moderate read performance and industry-standard command/identification support. It offers a wide supply voltage range and an extended industrial temperature rating for use in temperature-sensitive environments.

Key Features

• Memory Capacity and Organization  64 Mbit total capacity supporting 8M × 8 and 4M × 16 organizations to match parallel data bus widths.
• Read Performance  Asynchronous page mode read access time of 115 ns (64Mb timing option) with 25 ns page-mode cycle timing referenced in the datasheet.
• Non-Volatile FLASH Technology  Q‑FLASH® technology with automatic write and erase algorithms and a 5.6 μs-per-byte effective programming time when using the write buffer.
• Voltage Range  Operates from 2.7 V to 3.6 V for VCC and application programming, providing compatibility with common 3 V system rails.
• Package  64-ball FBGA package (64-FBGA, 10 × 13) suitable for high-density board layouts.
• Extended Temperature Range  Rated for −40 °C to +85 °C (ET) for operation across extended industrial temperatures.
• Data Protection and Security  Features include a 128-bit protection register, 64-bit unique device identifier, 64-bit user-programmable OTP cells, flexible sector locking, and enhanced protection options (VPEN = VSS).
• Endurance and Reliability  Specified for 100,000 erase cycles per block and supports automatic suspend options (block erase/program suspend-to-read and program suspend-to-read) to enable read access during background operations.
• Industry Compatibility  Industry-standard pinout, TTL-compatible inputs/outputs, Common Flash Interface (CFI) and Scalable Command Set for system-level interoperability.

Typical Applications

• Embedded Firmware Storage  Non-volatile 64 Mbit FLASH for storing boot code and firmware images where parallel FLASH access and 115 ns read performance are suitable.
• Microcontroller/System Data Storage  Persistent data or lookup-table storage in systems operating at 2.7–3.6 V supply rails using a parallel interface.
• Industrial and Extended-Temperature Electronics  Use in applications requiring operation from −40 °C to +85 °C and up to 100,000 erase cycles per block.
• Device Identification and Secure Configuration  On-device 64-bit unique ID and 64-bit OTP cells for device tracking or one-time programmable configuration data.

Unique Advantages

• Flexible Bus Widths:  Available 8× and 16× memory organizations allow designers to match the device to target system bus widths.
• Proven Flash Command Support:  Support for Common Flash Interface (CFI) and a Scalable Command Set simplifies device identification and command interoperability.
• Enhanced Data Protection:  Protection register, sector locking, and VPEN-based protection features provide multiple layers of data and program/erase security.
• Suspend/Resume Capability:  Block erase and program suspend features enable read access during background operations, improving system responsiveness.
• Industrial Temperature Rating:  Extended −40 °C to +85 °C rating supports deployment in temperature-sensitive environments.
• High Endurance:  100,000 erase cycles per block supports long field life for frequently updated code or data storage.

Why Choose MT28F640J3BS-115 ET?

The MT28F640J3BS-115 ET positions itself as a solid non-volatile storage option within Micron’s Q-FLASH® family, combining 64 Mbit capacity, parallel interface flexibility, and extended-temperature operation. Its feature set—CFI/Scalable Command support, protection registers, unique ID/OTP, suspend capabilities, and established endurance—addresses designs that need reliable on-board code and data retention with predictable erase/program behavior.

This device is well suited for engineers and procurement teams specifying parallel NOR FLASH where compatibility with 2.7–3.6 V systems, industrial temperature range, and robust protection features are required. The availability of related densities and package options in the family supports design scalability and product line consistency.

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