MT28F128J3RP-12 ET

The MT28F128J3RP-12 ET is a 128 Mbit non-volatile FLASH memory device manufactured by Micron Technology, Inc., delivered in a 56-pin TSOP Type I package. It provides parallel memory access with x8/x16 organization and is designed for systems requiring parallel FLASH storage with defined block geometry and command support.

Key characteristics include a 16M × 8 or 8M × 16 memory organization, asynchronous page-mode read support, a 2.7 V to 3.6 V supply range for operation and programming, and an extended operating temperature range of −40°C to +85°C.

Key Features

• Memory Capacity & Organization  128 Mbit total capacity with memory organization options of 16M × 8 or 8M × 16 and one hundred twenty-eight 128 KB erase blocks for structured block management.
• Non-Volatile FLASH Technology  Standard FLASH memory technology providing persistent storage without battery backup.
• Performance & Read Timing  Asynchronous page-mode read support with 120 ns / 25 ns read access time specified for the 128 Mb device.
• Voltage & Programming  Operates and programs at VCC = 2.7 V to 3.6 V; effective programming using the write buffer yields approximately 5.6 μs-per-byte programming performance.
• Interface & Compatibility  Parallel memory interface with an industry-standard pinout and fully TTL-compatible inputs and outputs; supports Common Flash Interface (CFI) and the Scalable Command Set.
• Protection & Security  128-bit protection register, 64-bit unique device identifier, and 64-bit user-programmable OTP cells; enhanced data protection when VPEN = VSS, plus flexible sector locking and lockout during power transitions.
• Reliability & Endurance  Rated for 100,000 erase cycles per block and includes automatic write and erase algorithms and suspend/resume options (erase/program suspend-to-read and program suspend-to-read).
• Package & Temperature  56-TFSOP (56-TSOP Type I) package (0.724", 18.40 mm width) and extended ambient operating temperature range of −40°C to +85°C.

Unique Advantages

• Predictable block layout:  One hundred twenty-eight 128 KB erase blocks simplify memory partitioning and firmware layout for block-based storage management.
• Wide supply range:  2.7 V to 3.6 V operation accommodates common 3 V system rails for both operation and programming.
• Improved programming throughput:  Write-buffer-assisted programming achieves an effective 5.6 μs per byte, reducing programming time compared with byte-by-byte programming.
• Built-in data protection:  128-bit protection register plus sector locking and power-transition lockout help safeguard stored data and region-level access.
• High endurance:  100,000 erase cycles per block provides a reliable endurance specification for repetitive program/erase use cases.
• Standard parallel interface:  Industry-standard pinout and TTL-compatible I/Os enable straightforward integration into parallel-memory system designs.

Why Choose IC FLASH 128MBIT PARALLEL 56TSOP?

The MT28F128J3RP-12 ET offers a combination of defined block geometry, parallel-interface performance, and robust protection features suitable for designs that require structured non-volatile storage with extended temperature operation. Its voltage flexibility, write-buffer programming efficiency, and endurance characteristics make it appropriate for systems that need repeatable block erase/program cycles and secure region management.

This device is suited to engineers and procurement teams specifying a 128 Mbit parallel FLASH in a 56-pin TSOP footprint who require explicit endurance, timing, and protection details for system-level memory planning and integration.

Request a quote or submit a product inquiry for the MT28F128J3RP-12 ET to receive pricing, lead-time, and availability information.