MT28F128J3RG-12 ET TR

The MT28F128J3RG-12 ET TR is a 128 Mbit non-volatile FLASH memory device in a 56-pin TSOP Type I package with a parallel interface. It implements Micron's Q-FLASH architecture with industry-standard pinout and Common Flash Interface (CFI) support for system-level integration.

This device targets applications requiring parallel NOR-style Flash storage with organized 16M × 8 or 8M × 16 memory formats, supporting in-system read, program and erase operations across an extended temperature range.

Key Features

• Memory Capacity and Organization — 128 Mbit total capacity organized as 16M × 8 or 8M × 16, with one hundred twenty-eight 128 KB erase blocks.
• Non-Volatile FLASH Technology — NOR-type FLASH memory providing persistent storage for code and data.
• Parallel Memory Interface — Asynchronous parallel interface with industry-standard pinout and fully TTL-compatible inputs/outputs.
• Read Performance — 120 ns read access time for the 128 Mb device (with 25 ns asynchronous page mode timing noted in datasheet).
• Program/Erase and Write Buffer — Automatic write and erase algorithms with a 5.6 μs-per-byte effective programming time when using the write buffer; 100,000 erase cycles per block.
• Voltage Range — VCC and programming operation supported from 2.7 V to 3.6 V.
• Data Protection and Security — 128-bit protection register, 64-bit unique device identifier, 64-bit user-programmable OTP cells, enhanced protection mode with VPEN = VSS, and flexible sector locking.
• Suspend and Resume — Automatic suspend options including block erase suspend-to-read, block erase suspend-to-program, and program suspend-to-read to improve system responsiveness during long operations.
• Operating Temperature — Extended temperature range: -40 °C to +85 °C (TA) as specified for ET devices.
• Package — 56-pin TSOP Type I (56‑TFSOP, 18.40 mm width) standard package (supplier device package: 56-TSOP).

Typical Applications

• Embedded firmware storage — Parallel NOR-style FLASH for system boot code and firmware that require non-volatile, byte-programmable memory.
• Consumer and industrial equipment — Storage for device configuration, system parameters, and application code within extended temperature environments.
• System-on-board memory — Parallel FLASH for systems using industry-standard pinouts and TTL-compatible I/O.

Unique Advantages

• Industry-standard pinout — Simplifies board-level integration with established parallel Flash designs and socketing options.
• Flexible memory organization — Available x8 and x16 organizations to match system bus width and memory-mapping requirements.
• Robust program/erase management — Built-in automatic write/erase algorithms with write-buffer acceleration and suspend options to minimize operational overhead.
• Integrated data protection — Protection register, unique ID, OTP cells and sector locking provide multiple layers of device and data control.
• Extended temperature support — Device rated for -40 °C to +85 °C operation for applications requiring wider thermal margins.

Why Choose MT28F128J3RG-12 ET TR?

The MT28F128J3RG-12 ET TR delivers a straightforward, parallel NOR FLASH solution with clear hardware-level controls for protection, suspend/resume, and automatic programming. Its 128 Mbit capacity, industry-standard TSOP package, and TTL-compatible interface make it appropriate for embedded designs that require persistent code and data storage under an extended temperature range.

This device is suited to engineers and procurement teams looking for a parallel FLASH device with documented program/erase behavior, CFI support, and integrated protection features to support long-term maintainable firmware and parameter storage.

Request a quote or contact sales to check availability, lead times and to discuss volume pricing or technical details for integrating the MT28F128J3RG-12 ET TR into your design.