MT28F128J3BS-12 MET TR

IC FLASH 128MBIT PARALLEL 64FBGA
Part Description

IC FLASH 128MBIT PARALLEL 64FBGA

Quantity 609 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package64-FBGA (10x13)Memory FormatFLASHTechnologyFLASH
Memory Size128 MbitAccess Time120 nsGradeIndustrial
Clock FrequencyN/AVoltage2.7V ~ 3.6VMemory TypeNon-Volatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word PageN/APackaging64-FBGA
Mounting MethodNon-VolatileMemory InterfaceParallelMemory Organization16M x 8, 8M x 16
Moisture Sensitivity Level4 (72 Hours)RoHS ComplianceROHS CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCN3A991B1AHTS Code8542.32.0071

Overview of MT28F128J3BS-12 MET TR – IC FLASH 128MBIT PARALLEL 64FBGA

The MT28F128J3BS-12 MET TR is a 128 Mbit non-volatile flash memory device in a parallel interface, provided in a 64-ball FBGA (10×13) package. It is organized as 16M × 8 or 8M × 16 and supports asynchronous page-mode reads with specified 128Mb timing.

Key device attributes include a 2.7 V to 3.6 V supply range for operation and programming, an operating temperature range of −40°C to +85°C (TA), industry-standard pinout, and a suite of protection and suspend features for robust data integrity and system integration.

Key Features

  • Memory Capacity & Organization  128 Mbit total capacity; memory organization options of 16M × 8 or 8M × 16 with 128 KB erase blocks (128Mb: one hundred twenty-eight 128KB blocks).
  • Interface & Read Performance  Parallel interface with asynchronous page-mode reads; 128Mb read access time listed at 120 ns (with 25 ns page-mode timing noted in datasheet).
  • Voltage & Programming  VCC, VCCQ, and VPEN operation and application programming supported from 2.7 V to 3.6 V.
  • Package & Mounting  64-FBGA (10×13) supplier device package; 64-ball FBGA option (1.00 mm pitch) is offered for compact board-level mounting.
  • Endurance & Reliability  Specified endurance of 100,000 erase cycles per block.
  • Protection & Security  128-bit protection register, 64-bit unique device identifier, and 64-bit user-programmable OTP cells; enhanced data protection feature with VPEN = VSS and flexible sector locking options.
  • Program/Erase Efficiency  Automatic write and erase algorithm and an effective programming throughput of 5.6 μs-per-byte using the write buffer; supports WRITE-to-BUFFER and byte/word program commands.
  • Suspend/Resume Operations  Automatic suspend options including Block Erase Suspend-to-Read, Block Erase Suspend-to-Program, and Program Suspend-to-Read for improved system responsiveness during long operations.
  • Standards & Compatibility  Common Flash Interface (CFI) and Scalable Command Set support; inputs and outputs are fully TTL-compatible with an industry-standard pinout.

Unique Advantages

  • Deterministic read timing: Asynchronous page-mode read access times (120 ns for 128Mb) support predictable parallel read performance.
  • Flexible data widths: Selectable organization as 16M × 8 or 8M × 16 to match system bus width and simplify board-level integration.
  • Wide supply range: 2.7 V to 3.6 V operation and programming reduces the need for additional supply rails in 3 V-class systems.
  • Extended temperature support: Specified −40°C to +85°C operating range for deployment in extended-temperature environments.
  • Comprehensive protection features: Multi-level protection including protection register, unique ID, OTP cells, and sector locking for controlled firmware and data security.
  • Compact FBGA footprint: 64-ball FBGA (10×13) package provides a small board area for high-density designs.

Why Choose MT28F128J3BS-12 MET TR?

The MT28F128J3BS-12 MET TR delivers 128 Mbit of parallel flash storage with a combination of predictable read performance, robust endurance, and comprehensive protection features. Its support for CFI and a scalable command set, along with suspend/resume capabilities and automatic program/erase algorithms, makes it suitable for designs that require managed non-volatile storage with deterministic behavior.

Available in a compact 64-FBGA (10×13) package and rated for a 2.7 V to 3.6 V supply and −40°C to +85°C operation, this Micron flash device is positioned for embedded systems that need parallel flash memory with block-level protection and identity features for inventory and security handling.

Request a quote or submit an RFQ to evaluate MT28F128J3BS-12 MET TR for your design needs; refer to the product datasheet for full technical details and command descriptions.

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