MT28F128J3BS-12 MET TR
| Part Description |
IC FLASH 128MBIT PARALLEL 64FBGA |
|---|---|
| Quantity | 609 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 64-FBGA (10x13) | Memory Format | FLASH | Technology | FLASH | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 128 Mbit | Access Time | 120 ns | Grade | Industrial | ||
| Clock Frequency | N/A | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 64-FBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 16M x 8, 8M x 16 | ||
| Moisture Sensitivity Level | 4 (72 Hours) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT28F128J3BS-12 MET TR – IC FLASH 128MBIT PARALLEL 64FBGA
The MT28F128J3BS-12 MET TR is a 128 Mbit non-volatile flash memory device in a parallel interface, provided in a 64-ball FBGA (10×13) package. It is organized as 16M × 8 or 8M × 16 and supports asynchronous page-mode reads with specified 128Mb timing.
Key device attributes include a 2.7 V to 3.6 V supply range for operation and programming, an operating temperature range of −40°C to +85°C (TA), industry-standard pinout, and a suite of protection and suspend features for robust data integrity and system integration.
Key Features
- Memory Capacity & Organization 128 Mbit total capacity; memory organization options of 16M × 8 or 8M × 16 with 128 KB erase blocks (128Mb: one hundred twenty-eight 128KB blocks).
- Interface & Read Performance Parallel interface with asynchronous page-mode reads; 128Mb read access time listed at 120 ns (with 25 ns page-mode timing noted in datasheet).
- Voltage & Programming VCC, VCCQ, and VPEN operation and application programming supported from 2.7 V to 3.6 V.
- Package & Mounting 64-FBGA (10×13) supplier device package; 64-ball FBGA option (1.00 mm pitch) is offered for compact board-level mounting.
- Endurance & Reliability Specified endurance of 100,000 erase cycles per block.
- Protection & Security 128-bit protection register, 64-bit unique device identifier, and 64-bit user-programmable OTP cells; enhanced data protection feature with VPEN = VSS and flexible sector locking options.
- Program/Erase Efficiency Automatic write and erase algorithm and an effective programming throughput of 5.6 μs-per-byte using the write buffer; supports WRITE-to-BUFFER and byte/word program commands.
- Suspend/Resume Operations Automatic suspend options including Block Erase Suspend-to-Read, Block Erase Suspend-to-Program, and Program Suspend-to-Read for improved system responsiveness during long operations.
- Standards & Compatibility Common Flash Interface (CFI) and Scalable Command Set support; inputs and outputs are fully TTL-compatible with an industry-standard pinout.
Unique Advantages
- Deterministic read timing: Asynchronous page-mode read access times (120 ns for 128Mb) support predictable parallel read performance.
- Flexible data widths: Selectable organization as 16M × 8 or 8M × 16 to match system bus width and simplify board-level integration.
- Wide supply range: 2.7 V to 3.6 V operation and programming reduces the need for additional supply rails in 3 V-class systems.
- Extended temperature support: Specified −40°C to +85°C operating range for deployment in extended-temperature environments.
- Comprehensive protection features: Multi-level protection including protection register, unique ID, OTP cells, and sector locking for controlled firmware and data security.
- Compact FBGA footprint: 64-ball FBGA (10×13) package provides a small board area for high-density designs.
Why Choose MT28F128J3BS-12 MET TR?
The MT28F128J3BS-12 MET TR delivers 128 Mbit of parallel flash storage with a combination of predictable read performance, robust endurance, and comprehensive protection features. Its support for CFI and a scalable command set, along with suspend/resume capabilities and automatic program/erase algorithms, makes it suitable for designs that require managed non-volatile storage with deterministic behavior.
Available in a compact 64-FBGA (10×13) package and rated for a 2.7 V to 3.6 V supply and −40°C to +85°C operation, this Micron flash device is positioned for embedded systems that need parallel flash memory with block-level protection and identity features for inventory and security handling.
Request a quote or submit an RFQ to evaluate MT28F128J3BS-12 MET TR for your design needs; refer to the product datasheet for full technical details and command descriptions.