MT28F128J3BS-12 ET TR
| Part Description |
IC FLASH 128MBIT PARALLEL 64FBGA |
|---|---|
| Quantity | 911 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 64-FBGA (10x13) | Memory Format | FLASH | Technology | FLASH | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 128 Mbit | Access Time | 120 ns | Grade | Industrial | ||
| Clock Frequency | N/A | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 64-FBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 16M x 8, 8M x 16 | ||
| Moisture Sensitivity Level | 4 (72 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT28F128J3BS-12 ET TR – IC FLASH 128MBIT PARALLEL 64FBGA
The MT28F128J3BS-12 ET TR is a 128 Mbit non-volatile Q-FLASH® memory device in a 64-ball FBGA (10 × 13) package. It provides parallel interface access with memory organizations of 16M × 8 or 8M × 16 and supports asynchronous page-mode reads.
Designed for systems that require solid-state program/erase capability, the device operates from 2.7 V to 3.6 V and supports an extended temperature range of −40 °C to +85 °C, delivering in-field programmability and data retention in space-constrained board layouts.
Key Features
- Memory Core Non-volatile FLASH memory, 128 Mbit total capacity organized as 16M × 8 or 8M × 16.
- Erase Block Architecture One hundred twenty 128 KB erase blocks (for 128 Mb device), enabling block-level erase and management.
- Read Performance Asynchronous page-mode read access time of 120 ns (with 25 ns page-mode access), supporting responsive data retrieval.
- Programming Performance Automatic write and erase algorithms with a write-buffer effective programming rate of 5.6 μs-per-byte.
- Voltage Range Single-supply operation with VCC, VCCQ, and VPEN from 2.7 V to 3.6 V, and application programming supported in this range.
- Endurance and Reliability Up to 100,000 erase cycles per block and automatic suspend options including block-erase suspend-to-read and program-suspend-to-read.
- Security & Identification 128-bit protection register, 64-bit unique device identifier and 64-bit user-programmable OTP cells for device ID and limited data protection.
- Data Protection Enhanced data protection option with VPEN = VSS, flexible sector locking, and sector erase/program lockout during power transitions.
- Interface & Command Support Parallel interface with industry-standard pinout, TTL-compatible inputs/outputs, Common Flash Interface (CFI) and Scalable Command Set support.
- Package & Temperature 64-ball FBGA (1.00 mm pitch, 10 × 13) package and extended operating temperature range of −40 °C to +85 °C (TA).
Typical Applications
- Firmware and boot code storage Non-volatile 128 Mbit FLASH with block erase/program suspend enables in-system updates and reliable boot code retention.
- Embedded program and data storage Parallel interface and asynchronous page-mode reads provide straightforward integration into systems requiring direct memory-mapped access.
- Field upgradeable systems Automatic write/erase algorithms, sector locking and power-transition protection support in-field programming and secure updates.
Unique Advantages
- Flexible memory organization: Choice of x8 or x16 configurations (16M × 8, 8M × 16) to match system bus widths and design constraints.
- Robust erase architecture: 128 KB erase blocks and 100,000 erase cycles per block for predictable block-level management and lifecycle planning.
- In-system programming support: Automatic write/erase algorithms and write-buffer programming speed simplify firmware deployment and reduce host overhead.
- Enhanced protection features: Protection register, unique device ID and OTP cells combined with sector locking and VPEN-controlled protection improve data integrity during power events.
- Industry-standard packaging and I/O: 64-ball FBGA package with industry-standard pinout and TTL-compatible signals eases PCB layout and system integration.
Why Choose MT28F128J3BS-12 ET TR?
The MT28F128J3BS-12 ET TR offers a well-documented Q-FLASH® FLASH memory solution tailored for designs that require parallel, memory-mapped non-volatile storage with robust program/erase control. Its combination of 128 Mbit capacity, flexible organization, and extended temperature operation makes it suitable for systems needing reliable in-system programming and secure data protection.
With industry-standard pinout, comprehensive protection features, and support for Common Flash Interface and Scalable Command Set, this device is appropriate for engineers seeking a compact FBGA package solution that balances capacity, endurance, and in-field programmability.
Request a quote or contact sales for pricing, availability, and lead-time information for the MT28F128J3BS-12 ET TR.