MT28F128J3BS-12 ET TR

IC FLASH 128MBIT PARALLEL 64FBGA
Part Description

IC FLASH 128MBIT PARALLEL 64FBGA

Quantity 911 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package64-FBGA (10x13)Memory FormatFLASHTechnologyFLASH
Memory Size128 MbitAccess Time120 nsGradeIndustrial
Clock FrequencyN/AVoltage2.7V ~ 3.6VMemory TypeNon-Volatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word PageN/APackaging64-FBGA
Mounting MethodNon-VolatileMemory InterfaceParallelMemory Organization16M x 8, 8M x 16
Moisture Sensitivity Level4 (72 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCN3A991B1AHTS Code8542.32.0071

Overview of MT28F128J3BS-12 ET TR – IC FLASH 128MBIT PARALLEL 64FBGA

The MT28F128J3BS-12 ET TR is a 128 Mbit non-volatile Q-FLASH® memory device in a 64-ball FBGA (10 × 13) package. It provides parallel interface access with memory organizations of 16M × 8 or 8M × 16 and supports asynchronous page-mode reads.

Designed for systems that require solid-state program/erase capability, the device operates from 2.7 V to 3.6 V and supports an extended temperature range of −40 °C to +85 °C, delivering in-field programmability and data retention in space-constrained board layouts.

Key Features

  • Memory Core  Non-volatile FLASH memory, 128 Mbit total capacity organized as 16M × 8 or 8M × 16.
  • Erase Block Architecture  One hundred twenty 128 KB erase blocks (for 128 Mb device), enabling block-level erase and management.
  • Read Performance  Asynchronous page-mode read access time of 120 ns (with 25 ns page-mode access), supporting responsive data retrieval.
  • Programming Performance  Automatic write and erase algorithms with a write-buffer effective programming rate of 5.6 μs-per-byte.
  • Voltage Range  Single-supply operation with VCC, VCCQ, and VPEN from 2.7 V to 3.6 V, and application programming supported in this range.
  • Endurance and Reliability  Up to 100,000 erase cycles per block and automatic suspend options including block-erase suspend-to-read and program-suspend-to-read.
  • Security & Identification  128-bit protection register, 64-bit unique device identifier and 64-bit user-programmable OTP cells for device ID and limited data protection.
  • Data Protection  Enhanced data protection option with VPEN = VSS, flexible sector locking, and sector erase/program lockout during power transitions.
  • Interface & Command Support  Parallel interface with industry-standard pinout, TTL-compatible inputs/outputs, Common Flash Interface (CFI) and Scalable Command Set support.
  • Package & Temperature  64-ball FBGA (1.00 mm pitch, 10 × 13) package and extended operating temperature range of −40 °C to +85 °C (TA).

Typical Applications

  • Firmware and boot code storage  Non-volatile 128 Mbit FLASH with block erase/program suspend enables in-system updates and reliable boot code retention.
  • Embedded program and data storage  Parallel interface and asynchronous page-mode reads provide straightforward integration into systems requiring direct memory-mapped access.
  • Field upgradeable systems  Automatic write/erase algorithms, sector locking and power-transition protection support in-field programming and secure updates.

Unique Advantages

  • Flexible memory organization: Choice of x8 or x16 configurations (16M × 8, 8M × 16) to match system bus widths and design constraints.
  • Robust erase architecture: 128 KB erase blocks and 100,000 erase cycles per block for predictable block-level management and lifecycle planning.
  • In-system programming support: Automatic write/erase algorithms and write-buffer programming speed simplify firmware deployment and reduce host overhead.
  • Enhanced protection features: Protection register, unique device ID and OTP cells combined with sector locking and VPEN-controlled protection improve data integrity during power events.
  • Industry-standard packaging and I/O: 64-ball FBGA package with industry-standard pinout and TTL-compatible signals eases PCB layout and system integration.

Why Choose MT28F128J3BS-12 ET TR?

The MT28F128J3BS-12 ET TR offers a well-documented Q-FLASH® FLASH memory solution tailored for designs that require parallel, memory-mapped non-volatile storage with robust program/erase control. Its combination of 128 Mbit capacity, flexible organization, and extended temperature operation makes it suitable for systems needing reliable in-system programming and secure data protection.

With industry-standard pinout, comprehensive protection features, and support for Common Flash Interface and Scalable Command Set, this device is appropriate for engineers seeking a compact FBGA package solution that balances capacity, endurance, and in-field programmability.

Request a quote or contact sales for pricing, availability, and lead-time information for the MT28F128J3BS-12 ET TR.

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