M56Z8G32256A

The M56Z8G32256A is an 8.59 Gbit LPDDR4/LPDDR4X SDRAM device organized as 256M × 32 (2 channels × 16 I/O). It combines high data throughput with ultra-low-voltage operation to serve designs that require high-bandwidth volatile memory in a compact package.

Built with a 16n prefetch DDR architecture and dual ×16 die configuration in-package, this JEDEC-qualified commercial-grade memory delivers programmable latencies, per-bank refresh control, and on-chip temperature monitoring for controlled self-refresh behavior.

Key Features

• Core & Memory Architecture  256M × 32 organization (256M16 × 2 die in package), 16n prefetch DDR architecture and 8 internal banks per channel for concurrent bank operation.
• Performance  Clock frequency 1.866 GHz (1866 MHz) with a data rate listed at 3733 Mbps/pin; datasheet notes up to 8.5 GB/s per die. Typical access time is 3.5 ns and write cycle time (word page) is 18 ns.
• Programmable Timing & Burst  Programmable READ/WRITE latencies (RL/WL) and selectable burst lengths (BL = 16, 32). Example speed grade shows WRITE latency options (Set A = 16, Set B = 30) and READ latency examples (DBI Disabled = 32, DBI Enabled = 36).
• Low-Voltage Power Options  Ultra-low-voltage core and I/O supply ranges: VDD1 = 1.70–1.95 V (nominal 1.80 V); VDD2 = 1.06–1.17 V (nominal 1.10 V); VDDQ = 1.06–1.17 V or low VDDQ = 0.57–0.65 V (nominal values noted in datasheet).
• Power Management & Reliability  Directed per-bank refresh for concurrent operation, partial-array self-refresh (PASR), on-chip temperature sensor to control self-refresh rate, programmable ODT (VSS), and selectable output drive strength.
• Interface & Signals  LPDDR4X interface with bidirectional/differential data strobe per byte lane and single-data-rate CMD/ADR entry; clock-stop capability is supported.
• Package & Environmental  200 Ball BGA surface-mount package, JEDEC-qualified commercial grade, RoHS-compliant. Operating temperature range: −25°C to +85°C.

Unique Advantages

• High sustained bandwidth: The 1866 MHz clock rate and up to 3733 Mbps/pin data rate yield high per-die throughput (up to 8.5 GB/s), enabling demanding memory bandwidth needs.
• Flexible latency and burst control: Programmable RL/WL and multiple burst-length options allow tuning of timing for system-level performance and power trade-offs.
• Power-scalable operation: Multiple supply voltage ranges (including low VDDQ option) and clock-stop capability help reduce system power across operating modes.
• Granular refresh control: Directed per-bank refresh and PASR support reduce refresh impact on active banks, improving effective memory availability.
• Thermal-aware behavior: On-chip temperature sensor adjusts self-refresh behavior to maintain data retention and energy efficiency over temperature variations.
• Compact surface-mount package: 200 Ball BGA package provides a high-density footprint suitable for space-constrained system designs.

Why Choose M56Z8G32256A?

The M56Z8G32256A positions itself as a high-performance, low-voltage LPDDR4/LPDDR4X SDRAM solution for designs that require significant bandwidth, configurable timing, and power-optimized operation. Its dual-die, 256M × 32 organization and programmable features make it suitable for systems that need concurrent bank operation, flexible latency tuning, and robust refresh management.

Backed by JEDEC qualification and RoHS-compliant packaging, the M56Z8G32256A is suited to commercial-grade products where predictable timing options, thermal-aware self-refresh, and a compact 200 Ball BGA footprint are important for long-term deployment and supply-chain integration.

Request a quote or submit an inquiry for pricing, availability, and additional technical details regarding the M56Z8G32256A LPDDR4x SDRAM.