M56Z4G16256A (2H)
| Part Description |
Ind. -40~85°C, LPDDR4x |
|---|---|
| Quantity | 692 Available (as of May 5, 2026) |
Specifications & Environmental
| Device Package | 200 Ball BGA | Memory Format | DRAM | Technology | DRAM - LPDDR4X | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 4 Gbit | Access Time | 3.5 ns | Grade | Industrial | ||
| Clock Frequency | 2.133 GHz | Voltage | 1.7V ~ 1.95V | Memory Type | Volatile | ||
| Operating Temperature | -40°C – 85°C | Write Cycle Time Word Page | 18 ns | Packaging | 200 Ball BGA | ||
| Mounting Method | Surface Mount | Memory Interface | LPDDR4X | Memory Organization | 256M x 16 | ||
| Moisture Sensitivity Level | 3 | RoHS Compliance | Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | JEDEC | ECCN | EAR99 | HTS Code | 8542.32.00.36 |
Overview of M56Z4G16256A (2H) – Ind. -40~85°C, LPDDR4x
The M56Z4G16256A (2H) is an industrial-grade LPDDR4x SDRAM device from ESMT, organized as 256M × 16 (4.295 Gbit) in a single-die package. It implements a 16n prefetch DDR architecture with 8 internal banks, delivering high-bandwidth volatile memory for designs that require robust operation across a wide temperature range.
With a 2.133 GHz clock frequency, JEDEC qualification, and industrial operating range of −40 °C to 85 °C, this LPDDR4x device is targeted at embedded and industrial applications demanding sustained performance, low-voltage operation, and compact BGA mounting.
Key Features
- Core and Architecture 16n prefetch DDR architecture with 8 internal banks per channel for concurrent operation and efficient command scheduling.
- Memory Organization & Capacity 256M × 16 organization providing 4.295 Gbit of volatile DRAM memory in a single-die package.
- High-Bandwidth Interface LPDDR4X memory interface with a clock frequency of 2.133 GHz and data rates matching the 2133 MHz/4266 Mbps configuration for high-throughput applications.
- Programmable Timing Supports programmable READ/WRITE latencies (RL/WL) and programmable on-the-fly burst lengths (BL = 16, 32) for timing flexibility.
- Power and Voltage Options Ultra-low-voltage core and I/O supplies: VDD1 = 1.70–1.95 V; VDD2 = 1.06–1.17 V; VDDQ selectable at 1.06–1.17 V or low VDDQ 0.57–0.65 V for power-optimized operation.
- Power-Saving and Reliability Features Directed per-bank refresh, partial-array self refresh (PASR), on-chip temperature sensor to control self-refresh rate, and clock-stop capability to optimize power use.
- Signal and Drive Control Bidirectional/differential data strobe per byte lane, selectable output drive strength (DS), and programmable VSS (ODT) termination for signal integrity tuning.
- Performance and Timing Metrics Access time down to 3.5 ns and write cycle time (word/page) of 18 ns; speed-grade cycle times include 535 ps @ RL=32/36 and 468 ps @ RL=36/40.
- Package and Mounting 200-ball BGA package, surface-mountable for compact board-level integration in space-constrained designs.
- Industrial Qualification & Compliance JEDEC-qualified industrial grade device rated for −40 °C to +85 °C and supplied in RoHS-compliant packaging.
Typical Applications
- Industrial Embedded Systems Provides JEDEC-qualified LPDDR4x capacity and industrial temperature tolerance for control, monitoring, and embedded compute modules operating in harsh environments.
- High-Bandwidth Edge Devices Suits edge compute and data-buffering tasks that require sustained throughput, leveraging the 2.133 GHz clock and high data-rate capability.
- Compact Board-Level Designs 200-ball BGA surface-mount package enables integration into space-constrained PCBs where a single-die 4Gb memory solution is required.
Unique Advantages
- High sustained throughput 2.133 GHz operation and LPDDR4x interface enable elevated data rates for demanding memory bandwidth requirements.
- Industrial temperature robustness Specified from −40 °C to +85 °C to support deployment in temperature-challenging environments.
- Flexible power configuration Multiple VDD and VDDQ options accommodate low-voltage and ultra-low-voltage system designs to balance performance and power.
- Advanced memory management Directed per-bank refresh, PASR, and an on-chip temperature sensor improve refresh efficiency and runtime reliability.
- Signal tuning and integrity Selectable drive strength and programmable ODT (VSS) allow designers to tune signal characteristics for platform-specific layouts.
- Compact, production-ready package 200-ball BGA surface-mount construction simplifies board integration and supports automated assembly workflows.
Why Choose M56Z4G16256A (2H)?
The M56Z4G16256A (2H) balances high-bandwidth LPDDR4x performance with industrial-grade reliability and flexible power options. Its 4.295 Gbit capacity in a single 256M ×16 die, programmable timing, and advanced refresh and power-management features make it well suited for embedded systems and edge platforms that require sustained data throughput and operation across wide temperature ranges.
Designed and manufactured by ESMT, this device is JEDEC-qualified and delivered in RoHS-compliant packaging, providing a compact, configurable memory solution for industrial and high-performance embedded designs that demand predictable behavior and integration simplicity.
Request a quote or submit an inquiry to get pricing and availability information for the M56Z4G16256A (2H) LPDDR4x SDRAM. Provide your planned quantity and board requirements to receive a tailored response.
Date Founded: 1998
Headquarters: Hsinchu Science Park, Hsinchu, Taiwan
Employees: 400+
Revenue: $377.8 Million
Certifications and Memberships: N/A