M55D4G32128A-EEBIG2R
| Part Description |
LPDDR3 SDRAM 4Gb (128Mbx32) 933MHz 1.8V/1.2V 178-BGA Industrial Grade, Pb-free |
|---|---|
| Quantity | 615 Available (as of May 5, 2026) |
Specifications & Environmental
| Device Package | 178-BGA (10x11.5) | Memory Format | DRAM | Technology | DRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 4 Gbit | Access Time | 5.5 ns | Grade | Industrial | ||
| Clock Frequency | 933 MHz | Voltage | 1.14V ~ 1.30V, 1.70V ~ 1.95V | Memory Type | Volatile | ||
| Operating Temperature | -40°C – 85°C | Write Cycle Time Word Page | 15 ns | Packaging | 178-BGA | ||
| Mounting Method | Surface Mount | Memory Interface | Parallel | Memory Organization | 128M x 32 | ||
| Moisture Sensitivity Level | 3 | RoHS Compliance | Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | JEDEC | ECCN | EAR99 | HTS Code | 8542.32.00.36 |
Overview of M55D4G32128A-EEBIG2R – LPDDR3 SDRAM 4Gb (128Mbx32) 933MHz 1.8V/1.2V 178-BGA Industrial Grade, Pb-free
The M55D4G32128A-EEBIG2R is a JEDEC-compliant LPDDR3 SDRAM device providing 4.295 Gbit organized as 128M × 32 with an internal architecture of 16M words × 32 bits × 8 banks. It delivers a 933 MHz clock (1866 Mb/s per pin data rate) in a compact 178-ball BGA, optimized for industrial-grade applications.
Designed with ultra-low-voltage core and I/O supplies and a wide operating temperature range of −40°C to 85°C, this device targets embedded and industrial systems that require high-bandwidth memory, deterministic timing options, and robust power-management features.
Key Features
- Memory Architecture 4.295 Gbit capacity organized as 128M × 32 with eight internal banks (16M × 32 × 8), 4KB page size, and an eight-bit prefetch DDR architecture.
- Performance 933 MHz clock providing 1866 Mb/s per pin data rate, selectable read latencies (RL options include 3, 6, 8, 9, 10, 11, 12, 14, 16) and Burst Length = 8 for sustained high-throughput transfers.
- Power Ultra-low-voltage core and I/O supplies with VDD1 = 1.70–1.95 V and VDD2 / VDDCA / VDDQ = 1.14–1.30 V, supporting low-power operation and deep power-down modes.
- Interface & Timing Double data rate command/address inputs, bidirectional/differential DQS per byte, differential clock inputs (CK_t/CK_c), CA training and write leveling for timing adjustment, and an interface labeled HSUL_12.
- Reliability & Refresh JEDEC LPDDR3-compliant refresh features including auto refresh, self refresh, per-bank refresh for concurrent operation, Auto Temperature Compensated Self Refresh (ATCSR), Partial-Array Self Refresh (PASR), and bank/segment masking.
- System Controls & Options Supports on-die termination (ODT), programmable drive strength (DS), data mask (DM), auto precharge options, and deep power-down (DPD) for flexible system power management.
- Package & Environmental Pb-free 178-ball BGA (10 × 11.5 mm) surface-mount package rated for industrial operating temperature −40°C to 85°C and JEDEC qualification.
- Timing Characteristics Typical access time 5.5 ns and write cycle time (word page) 15 ns as documented in the device specification.
Typical Applications
- Industrial Systems Industrial-grade embedded controllers and automation equipment requiring memory rated for −40°C to 85°C operation and JEDEC LPDDR3 compatibility.
- Embedded Computing LPDDR3-compliant system memory for SoCs and modules that need a 4Gb, 128M × 32 organization with high data throughput.
- Compact Board-Level Designs High-density 178-BGA (10×11.5 mm) package useful for space-constrained PCBs where surface-mount BGA integration is required.
- Low-Power Designs Systems leveraging ultra-low-voltage core and I/O supplies and deep power-down/self-refresh capabilities to manage power across operating modes.
Unique Advantages
- JEDEC LPDDR3 Compliance: Ensures compatibility with LPDDR3 host controllers and simplifies integration into LPDDR3-based system designs.
- Industrial Temperature Range: Specified for −40°C to 85°C operation, making the device suitable for harsh environments and extended-temperature deployments.
- High Data Rate in a Compact Package: 933 MHz (1866 Mb/s per pin) performance in a 178-ball BGA provides high bandwidth without sacrificing board space.
- Comprehensive Power Management: Multiple low-voltage rails, deep power-down, ATCSR and PASR support enable flexible power-saving strategies for embedded systems.
- Robust Timing and Training Features: CA training, write leveling, selectable RL/WL values, and ODT/programmable drive strength help tune timing and signal integrity in complex designs.
- Lead-Free, Surface-Mount Packaging: Pb-free 178-BGA supports modern assembly processes and compact, high-density board layouts.
Why Choose M55D4G32128A-EEBIG2R?
The M55D4G32128A-EEBIG2R positions itself as a high-bandwidth, industrial-grade LPDDR3 memory device for embedded and industrial applications that demand JEDEC compliance, robust timing controls, and wide temperature operation. Its combination of 4.295 Gbit capacity, 933 MHz clocking (1866 Mb/s per pin), and advanced power-management features supports designs that require both performance and predictable behavior across temperature extremes.
Manufactured by ESMT and delivered in a compact Pb-free 178-BGA surface-mount package, this part is suited for system designers seeking a dense, JEDEC-compliant LPDDR3 memory solution with explicit support for timing training, per-bank refresh, and deep power states to optimize system power and reliability.
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